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Determination of 2DEG parameters in LED heterostructures with three quantum wells InxGa1-xN/GaN by terahertz time-domain spectroscopy (THz-TDs)
Russian version
DOI: 10.21883/PSS.2023.02.55399.503
Burmistrov E. R. 1, Avakyants L. P.1
1Lomonosov Moscow State University, Moscow, Russia
Email: eugeni.conovaloff@yandex.ru, avakyants@physics.msu.ru
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Terahertz time-domain spectroscopy (THz-TDs) has been used to record the resonant frequencies of plasmon oscillations excited in samples of heterostructures with three InxGa1-xN/GaN quantum wells (QWs) by laser pulses with a duration of 130 fs in the temperature range from 90 to 170 K. Fast Fourier transform (FFT) of the time dependence of the electric field of THz-pulses made it possible to obtain the frequency spectra of the power and phase shift of THz-radiation, the interpretation of which made it possible to estimate the pulse relaxation time, mobility and effective mass of two-dimensional electron gas (2DEG) in the heterostructures. Using a series of frequency spectra of the power and phase shift of THz-radiation, the temperature dependences of the effective mass and relaxation time of the 2DEG pulse were obtained. Mobility value 2DEG obtained by the THz-TDs is in good agreement with the data of Hall measurements. Keywords: heterostructures, pulse relaxation time, 2DEG, terahertz radiation, terahertz spectroscopy.
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