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Formation and study of metal-insulator-semiconductor structures based on hafnium oxide films
Afanasiev M. S.
1, Belorusov D. A.
1, Kiselev D. A.
1, Luzanov V. A. 1, Chucheva G. V.
1
1Fryazino Branch, Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, Russia
Email: gvc@ms.ire.rssi.ru, dm.kiselev@gmail.com
Films of hafnium oxide (HfO2) were synthesized on a silicon substrate by magnetron sputtering of a target with a similar composition. The results of studies of the structural composition of HfO2 films and the electrical properties of metal-insulator-semiconductor (Ni-HfO_2-n-Si) structures are presented Keywords: Metal-dielectric-semiconductor (MDS) structures, hafnium oxide (HfO2) ferroelectric films, piezoelectric response, microstructure, electrical properties.
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