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Electrical conductivity and interface phenomena in thin-film heterostructures based on lithium niobate and lithium tantalate
Russian version
DOI: 10.21883/PSS.2023.04.55996.7
Gudkov S. I. 1, Solnyshkin A. V. 1, Zhukov R. N. 2, Kiselev D. A. 2, Semenova E. M. 1, Belov A.N. 3
1Tver State University, Tver, Russia
2National University of Science and Technology MISiS, Moscow, Russia
3National Research University of Electronic Technology (MIET), Zelenograd, Russia
Email: becauseimaphysicist@yandex.ru, a.solnyshkin@mail.ru, rom_zhuk@mail.ru, dm.kiselev@misis.ru, semenova_e_m@mail.ru, nanointech@mail.ru
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In this work, the electrophysical properties of metal-ferroelectric-semiconductor structures - Cu/LiNbO3/Si and Ag/LiTaO3/Si - with a ferroelectric layer thickness of 200 nm have been studied. The ferroelectric layers were deposited by RF magnetron sputtering. A topography study of thin film surface revealed a grain structure. The electrical conductivity mechanisms in Cu/LiNbO3/Si and Ag/LiTaO3/Si were considered. In a dependence of bias voltage value, there are a space charge-limited current, hopping conduction, and Schottky emission in Cu/LiNbO3/Si structures. For Ag/LiTaO3/Si structures, the space charge-limited current and hopping conduction were observed. An asymmetry of the current-voltage characteristics may indicate the presence of a potential barrier at the interface. For the studied structures, the value of the potential barrier was determined Keywords: metal-ferroelectric-semiconductor structures, thin films, lithium niobate, lithium tantalate, electrophysical properties, electrical conductivity, potential barrier.
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