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Low frequency noise and resistance in non-passivated InAsSbP/InAs based photodiodes in the presence of atmosphere with ethanol vapor
Russian version
DOI: 10.61011/TPL.2023.06.56371.19524
Levinshtein M. E.1, Matveev B. A.1, Dyakonova N.2
1Ioffe Institute, St. Petersburg, Russia
2Laboratoire Charles Coulomb (L2C), University of Montpellier, Montpellier, France
Email: melev@nimis.ioffe.ru
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Low frequency noise and electrical characteristics of the p-InAsSbP/n-InAs single photodiode heterostructures grown onto n+-InAs substrates have been measured in the presence of atmosphere containing ethanol vapor. Correlation between ethanol vapor density and electrical noise spectral density, as well as the heterostructure resistance, has been estimated, and possible reasons for such correlation have been discussed. Keywords: InAs-photodiodes, hydrocarbon sensor, low-frequency noise, InAs natural surface oxide, surface-sensitive structures. DOI: 10.61011/TPL.2023.06.56371.19524
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