Physics of the Solid State
Volumes and Issues
Home » Physics of the Solid State » Year 2023, issue 9 » Article p. 1457
<<<>>>
Charge transfer in solid solutions Bi0.9Sb0.1 doped with Mn
Russian version
Najafov A. I.1, Mammadov T. G.1, Aliguliyeva Kh. V.1,2, Gahramanov S. Sh.1, Aliyeva V. B.1, Zverev V. N.3, Abdullayev N. A.1,4
1 Institute of Physics of the Ministry of Science and Education, Baku, Azerbaijan
2Sumgait State University, Sumgait, Azerbaijan
3Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia
4Baku State University, Baku, Azerbaijan
Email: abnadir@mail.ru
PDF
Electrical and galvanomagnetic effects in single crystals of Bi0.9Sb0.1 solid solutions doped with 1 at.% Mn have been studied. It is shown that in single crystals of Bi0.9Sb0.1 solid solutions doped with 1 at.% Mn at temperatures below 180 K, activation conductiity with an activation energy of 10 meV is observed. After thermal annealing, in addition to activation conductivity, at temperatures below 20 K a "metallic" character of conductivity is observed, which is due to conduction over the impurity band. It was found that in single crystals of Bi0.9Sb0.1 solid solutions doped with 3 at.% Mn, a "metallic" character of conductivity is observed with a feature at low temperatures of about 25 K, which reacts to applied external magnetic fields. After thermal annealing, the "metallic" nature of the conductivity is retained, but this feature practically disappears. The mobility and concentration of charge carriers are estimated. Keywords: solid solutions, impurity band, conductivity, magnetoresistance, activation energy.
  1. E.J. Tichovoisky, J.G. Mavroides. Solid State Commun. 7, 13, 927 (1969)
  2. G. Oelgart, R. Herrmann. Phys. Status Solidi B 75, 1, 189 (1976)
  3. M.R. Ellett, R.B. Horst, L.R. Williams, K.F. Cuff. Proc. Int. Conf. Phys. Semiconductors. Kyoto (1966). J. Phys. Soc. Jpn. 21 Suppl. 666 (1966)
  4. P.W. Chao, H.T. Chu, Y.H. Kao. Phys. Rev. B 9, 10, 4030 (1974)
  5. B. Lenoir, M. Cassart, J.-P. Michenaud, H. Scherrer, S. Scherrer. J. Phys. Chem. Solids 57, I, 89 (1996)
  6. B. Lenoir, H. Scherrer, T. Caillat. Semicond. Semimet. 69, 101 (2001)
  7. G. Oelgart, G. Schneider, W. Kraak, R. Herrmann. Phys. Status Solidi B 74, 1, K75 (1976)
  8. W. Kraak, G. Oelgart, G. Schneider, R. Herrmann. Phys. Status Solidi B 88, 1, 105 (1978)
  9. A.L. Jain. Phys. Rev. 114, 6, 1518 (1959)
  10. G.E. Smith, R. Wolfe. J. Appl. Phys. 33, 3, 841 (1962)
  11. A.M. Ibrahim, D.A. Thomson. Mater. Chem. Phys. 12, 1, 29 (1985)
  12. F.D. Rosi. Solid-State Electronics 11, 9, 833 (1968)
  13. D.A. Wright. Metallurg. Rev. 15, 1, 147 (1970)
  14. Sh. Gao, J. Gaskins, X. Hu, K. Tomko, P. Hopkins, S.J. Poon. Sci. Rep. 9, 14892 (2019)
  15. M.N. Norizan, Y. Ohishi, K. Kurosaki, H. Muta. Mater. Transact. 60, 6, 1072 (2019)
  16. A.M. Ahmed, H.F. Mohamed, A.K. Diab, E.Y. Omar. Inf. Sci. Lett. 12, 1, 149 (2023)
  17. E. Gunes, B. Landschreiber, D. Hartung, M.T. Elm, C. Rohner, P.J. Klar, S. Schlecht. J. Elektron. Mater. 43, 6, 2127 (2014).
  18. C.Y. Wu, J. Han, L. Sun, H. Gong. J. Mater. Chem. C 8, 2, 581 (2020)
  19. Z. Chi, Y.-Ch. Lau, X. Xu, T. Ohkubo, K. Hono, M. Hayashi. Sci. Adv. 6, 10, 2324 (2020)
  20. E. Rongione, L. Baringthon, D. She, G. Patriarche, R. Lebrun, A. Lemaitre, M. Morassi, N. Reyren, M. Micica, J. Mangeney, J. Tignon, F. Bertran, S. Dhillon, P. Le Fevre, H. Jaffres, J.-M. George. Adv. Sci. Early View 2301124 (2023)
  21. S. Rho, H. Park, J. Park, K. Jeong, H. Kim, S.-B. Hong, J. Kim, H.W. Lim, Y. Yi, Ch. Kang, M.-H. Cho. Adv. Funct. Mater. Early View 2300175 (2023)
  22. Zhao, F. Jiang, H. Hong, D. Wang, Q. Li, Y. Meng, Z. Huang, Y. Guo, X. Li, A. Chen, R. Zhang, Sh. Zhang, J.C. Ho, Z. Yao, W. Liu, Ch. Zhi. Mater. Today 51, 87 (2021)
  23. L. Fu, C.L. Kane, E.J. Mele. Phys. Rev. Lett. 98, 10, 106803 (2007)
  24. L. Fu, C.L. Kane. Phys. Rev. B 76, 4, 045302 (2007)
  25. J.C.Y. Teo, L. Fu, C.L. Kane. Phys. Rev. B 78, 4, 045426 (2008)
  26. A.A. Taskin, Y. Ando. Phys. Rev. B 80, 8, 085303 (2009)
  27. D. Hsieh, Y. Xia, L. Wray, D. Qian, A. Pal, J.H. Dil, J. Osterwalder, F. Meier, G. Bihlmayer, C.L. Kane, Y.S. Hor, R.J. Cava, M.Z. Hasan. Science 323, 5916, 919 (2009)
  28. Y.L. Chen, J.-H. Chu, J.G. Analytis, Z.K. Liu, K. Igarashi, H.-H. Kuo, X.L. Qu, S.K. Mo, R.G. Moore, D.H. Lu, M. Hashimoto, T. Sasagawa, S.C. Zhang, I.R. Fisher, Z. Hussain, Z.X. Shen. Science 329, 5992, 659 (2010)
  29. J. Maciejko, X.L. Qi, H.D. Drew, S.C. Zhang. Phys. Rev. Lett., 105, 16, 166803 (2010)
  30. W.-K. Tse, A.H. MacDonald. Phys. Rev. B 82, 16, 161104 (2010)
  31. W.-K. Tse, A.H. MacDonald. Phys. Rev. Lett. 105, 5, 057401 (2010)
  32. T. Fan, M. Tobah, T. Shirokura, N.H.D. Khang, P.N. Hai. Jpn. J. Appl. Phys. 59, 6, 063001 (2020)
  33. L. Aggarwal, P. Zhu, T.L. Hughes, V. Madhavan. Nature Commun. 12, 1, 4420 (2021)
  34. D. Sadek, R. Daubriac, C. Durand, R. Monflier, Q. Gravelier, A. Proietti, F. Cristiano, A. Arnoult, S.R. Plissard. Cryst. Growth Des. 22, 8, 5081 (2022)
  35. L. Baringthon, T.H. Dang, H. Jaffr\`es, N. Reyren, J.-M. George, M. Morassi, G. Patriarche, A. Lemaitre, F. Bertran, P. F\`evre. Phys. Rev. Mater. 6, 074204 (2022)
  36. H. Okamoto. J. Phase Equilib. Diffus. 33, 6, 493 (2012)
  37. P. Kainzbauer, K.W. Richter, H.S. Effenberger, G. Giester, H. Ipser. J. Phase Equilibria Diffusion 40, 4, 462 (2019)
  38. R.N. Zitter, P.C. Watson. Phys. Rev. B 10, 2, 607 (1974)
  39. P. Cucka, C.S. Barrett. Acta Cryst. 15, 9, 865 (1962)
  40. N.A. Abdullayev, S.Sh. Kakhramanov, T.G. Kerimova, K.M. Mustafaeva, S.A. Nemov. Semiconductors 43, 2, 145 (2009)
  41. M.M. Otrokov, I.I. Klimovskikh, H. Bentmann, D. Estyunin, A. Zeugner, Z.S. Aliev, S. Gab, A.U.B. Wolter, A.V. Koroleva, A.M. Shikin, M. Blanco-Rey, M. Hoffmann, I.P. Rusinov, A.Y. Vyazovskaya, S.V. Eremeev, Y.M. Koroteev, V.M. Kuznetsov, F. Freyse, J. Sanchez-Barriga, I.R. Amiraslanov, M.B. Babanly, N.T. Mamedov, N.A. Abdullayev, V.N. Zverev, A. Alfonsov, V. Kataev, B. B.chner, E.F. Schwier, S. Kumar, A. Kimura, L. Petaccia, G. Di Santo, R.C. Vidal, S. Schatz, K. Kib ner, M. Unzelmann, C.H. Min, S. Moser, T.R.F. Peixoto, F. Reinert, A. Ernst, P.M. Echenique, A. Isaeva, E.V. Chulkov. Nature 576, 7787, 416 (2019)
  42. I.I. Klimovskikh, M.M. Otrokov, D. Estyunin, S.V. Eremeev, S.O. Filnov, A. Koroleva, E. Shevchenko, V. Voroshnin, A.G. Rybkin, I.P. Rusinov, M. Blanco-Rey, M. Hoffmann, Z.S. Aliev, M.B. Babanly, I.R. Amiraslanov, N.A. Abdullayev, V.N. Zverev, A. Kimura, O.E. Tereshchenko, K.A. Kokh, L. Petaccia, G. Di Santo, A. Ernst, P.M. Echenique, N.T. Mamedov, A.M. Shikin, E.V. Chulkov. npj Quantum Mater. 5, 54 (2020)
  43. N.F. Mott, E.A. Davis. Electronic Processes in Non-crystalline Materials. Oxford, Clarendon Press, (1971)
  44. T. Kurosawa, M. Matsui, W. Sasaki. J. Phys. Soc. Jpn. 42, 5, 1622 (1977)
  45. Y. Ootuka, A. Kawabata. Prog. Theor. Phys. Suppl. 84, 249 (1985)
  46. C. Uher, L.M. Sander. Phys. Rev. B 27, 2, 1326 (1983)
  47. N.A. Abdullayev, N.M. Abdullayev, Kh.V. Aliguliyeva, T.G. Kerimova, G.S. Mehdiyev, S.A. Nemov. Semiconductors 45, 1, 37 (2011)
  48. N.A. Abdullayev, K.M. Jafarli, Kh.V. Aliguliyeva, L.N. Aliyeva, S.Sh. Gahramanov, S.A. Nemov. Semiconductors 51, 7, 942 (2017)
  49. S.I. Dorozhkin, A.A. Kapustin, S.S. Murzin. JETP Lett. 97, 3, 149 (2013)
  50. W.S. Boyle, A.D. Brailsford. Phys. Rev. 120, 6, 1943 (1960)
  51. B.I. Shklovskii, A.L. Efros. Electronic Properties of Dopped Semiconductors. Springer Series in Solid-State Sciences (1984). V. 45.

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru