Romanova O. B.
1, Gerasimova Yu. V.
1,2, Gadzhiev T. M.
3, Aplesnin S. S.
1,4, Aleksandrovsky A. S.
1,2, Sitnikov M. N.
4, Aliev M. A.
3, Udod L. V.
1,4, Abdelbaki H.
41Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Krasnoyarsk, Russia
2Institute of engineering physics and radio electronics, Siberian Federal University, Krasnoyarsk, Russia
3Amirkhanov Institute of Physics, Daghestan Federal Research Center, Russian Academy of Sciences, Makhachkala, Russia
4Siberian State University of Science and Technology, Krasnoyarsk, Russia
Email: rob@iph.krasn.ru, jul@iph.krasn.ru, apl@iph.krasn.ru, aleksandrovsky@kirensky.ru, kineru@mail.ru, aliev_marat@mail.ru, luba@iph.krasn.ru, abdelhichem@yandex.com
Polycrystalline films of Cu0.27Ga1.85Se1.88 and Cu0.33Ga1.54Se2.13 with a chalcopyrite structure of the Cu-Ga-Se system were synthesized. The effect of selenization temperature on the chemical composition and structure of films was studied by X-ray phase analysis and electron microscopy. The dependence of film resistance on concentration and temperature has been studied. The effect of photoconductivity was discovered on Cu0.27Ga1.85Se1.88 films. The Raman spectra of these films were calculated. From the absorption spectra, the Urbach energy EU=0.9 eV was determined, which indicates a nouniform distribution of localized states in the electronic structure of the films. Migration and dipole-orientation contributions to the electrical polarization of the films have been established. Using the Debye model, the relaxation time in film samples of the Cu-Ga-Se system was calculated. Keywords: polycrystalline films, synthesis of films of the Cu-Ga-Se system, Raman spectra, electrical properties, photoconductivity.
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