Physics of the Solid State
Volumes and Issues
Home » Physics of the Solid State » Year 2023, issue 10 » Article p. 1642
<<<>>>
Structural transformation of α- and kappa-Ga2O3 thin films on sapphire upon annealing in air
Russian version
Myasoedov A. V.1, Pavlov I. S.2, Scheglov M. P.1, Pechnikov A. I.1, Nikolaev V. I.1
1Ioffe Institute, St. Petersburg, Russia
2Federal Research Center "Crystallography and Photonics", Russian Academy of Sciences, Moscow, Russia
Email: amyasoedov88@gmail.com
PDF
The results of a study of the effect of annealing on the structural transformation of thin films of α- and kappa-Ga2O3 obtained by chloride vapor-phase epitaxy on c-plane of a sapphire substrate are presented. It has been shown that upon annealing of an α-Ga2O3 film during 60 min at a temperature in the region of the polymorphic transition of 550-575oC, its homogeneity begins to be disrupted, and a partial polymorphic transition is observed with the formation of small β-Ga2O3 crystallites. As a result of high-temperature annealing of the kappa-Ga2O3 film in air for 30 min at a temperature T=850oC, the kappa->β transition and recrystallization of the original film into a homogeneous β-Ga2O3 film were observed. It was found that the resulting film predominantly consists of mutually oriented domains. Using transmission electron microscopy, the orientation relationships between the film and the sapphire substrate were determined. The structure of boundaries between domains has been studied. Keywords: gallium oxide, polymorphism, polymorphic transitions.
  1. T. Oshima, T. Okuno, S. Fujita. Jpn. J. Appl. Phys. Part 1 Regul. Pap. Short Notes Rev. Pap. 46, 11, 7217 (2007)
  2. W.S. Hwang, A. Verma, H. Peelaers, V. Protasenko, S. Rouvimov, H. (Grace) Xing, A. Seabaugh, W. Haensch, C. Van de Walle, Z. Galazka, M. Albrecht, R. Fornari, D. Jena. Appl. Phys. Lett. 104, 20, 203111 (2014)
  3. N.R. Taylor, M. Ji, L. Pan, P. Kandlakunta, I. Kravchenko, P. Joshi, T. Aytug, M.P. Paranthaman, L.R. Cao. Nucl. Instruments Meth. Phys. Res. Sect. A Accel. Spectrometers. Detect. Assoc. Equip. 1013, 4, 165664 (2021)
  4. A.V. Almaev, V.I. Nikolaev, N.N. Yakovlev, P.N. Butenko, S.I. Stepanov, A.I. Pechnikov, M.P. Scheglov, E.V. Chernikov. Sensors Actuators B 364, 131904, (2022)
  5. J. Zhang, J. Shi, D.-C. Qi, L. Chen, K.H.L. Zhang. APL Mater. 8, 2, 020906, (2020)
  6. E. Ahmadi, Y. Oshima. J. Appl. Phys. 126, 16, 160901, (2019)
  7. V.I. Nikolaev, A.V. Chikiryaka, L.I. Guzilova, A.I. Pechnikov. PZhTF 45, 21, 51, (2019). (in Russian)
  8. J. Kim, D. Tahara, Y. Miura, B.G. Kim. Appl. Phys. Express 11, 6, (2018)
  9. M.B. Maccioni, V. Fiorentini. Appl. Phys. Express 9, 4, 2(2016)
  10. S. Fujita, K. Kaneko. J. Cryst. Growth 401, 588 (2014)
  11. T. Kawaharamura, G.T. Dang, M. Furuta. Jpn. J. Appl. Phys. 51, 4, PART 1, 2 (2012)
  12. Y. Li, X. Xiu, W. Xu, L. Zhang, H. Zhao, Z. Xie, T. Tao, P. Chen, B. Liu, R. Zhang, Y. Zheng. Superlat. Microstruct. 152, 2, 106845, (2021)
  13. S.D. Lee, K. Akaiwa, S. Fujita. Phys. Status Solidi Curr. Top. Solid State Phys. 10, 11, 1592 (2013)
  14. I. Cora, Z. Fogarassy, R. Fornari, M. Bosi, A. Recnik, B. Pecz. Acta Mater. 183, 216 (2020)
  15. J. Lee, H. Kim, L. Gautam, K. He, X. Hu, V.P. Dravid, M. Razeghi. Photonics 8, 1, 1 (2021)
  16. R. Fornari, M. Pavesi, V. Montedoro, D. Klimm, F. Mezzadri, I. Cora, B. Pecz, F. Boschi, A. Parisini, A. Baraldi, C. Ferrari, E. Gombia, M. Bosi. Acta Mater. 140, 411 (2017)
  17. H. Son, Y.-J. Choi, J. Hwang, D.-W. Jeon. ECS J. Solid State Sci. Technol. 8, 7, Q3024 (2019)
  18. R. Jinno, K. Kaneko, S. Fujita. AIP Adv. 10, 11, (2020)
  19. S.J. Pearton, J. Yang, P.H. Cary, F. Ren, J. Kim, M.J. Tadjer, M.A. Mastro. Appl. Phys. Rev. 5, 1, (2018)
  20. I. Cora, F. Mezzadri, F. Boschi, M. Bosi, M. Caplovicova, G. Calestani, I. Dodony, B. Pecz, R. Fornari. Cryst. Eng. Commun. 19, 11, 1509 (2017)
  21. M. Marezio, J.P. Remeika. J. Chem. Phys. 46, 5, 1862 (1967)
  22. J.P. Remeika, M. Marezio. Appl. Phys. Lett. 8, 4, 87 (1966).
  23. J. Angstrem hman, G. Svensson, J. Albertsson. Acta Crystallogr. C 52, 6, 1336 (1996)
  24. S. Yoshioka, H. Hayashi, A. Kuwabara, F. Oba, K. Matsunaga, I. Tanaka. J. Phys. Condens. Matter 19, 34, (2007)
  25. A.I. Pechnikov, S.I. Stepanov, A.V. Chikiryaka, M.P. Scheglov, M.A. Odnobludov, V.I. Nikolaev. Semiconductors 53, 6, 780 (2019)
  26. V. Gottschalch, K. Mergenthaler, G. Wagner, J. Bauer, H. Paetzelt, C. Sturm, U. Teschner. Phys. Status Solidi 206, 2, 243 (2009)
  27. J. Wei, K. Kim, F. Liu, P. Wang, X. Zheng, Z. Chen, D. Wang, A. Imran, X. Rong, X. Yang, F. Xu, J. Yang, B. Shen, X. Wang. J. Semiconductors 40, 1, 012802 (2019)
  28. N. Husnain, E. Wang, S. Fareed, M.T. Anwar. Catalysts 9, 12, (2019)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru