Physics of the Solid State
Volumes and Issues
Structure and Dielectric Properties of Barium-Strontium Niobate Thin Films Grown on MgO(110) and MgO(001) Single-Crystal Substrates
Stryukov D. V. 1, Matyash Ya. Yu. 1, Pavlenko A. V. 1
1Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Rostov-on-Don, Russia
Email: strdl@mail.ru, matyash.ya.yu@gmail.com, tolik_260686@mail.ru

PDF
Sr0.6Ba0.4Nb2O6 thin films of ~550 nm thickness with a preliminarily deposited conductive SrRuO3 layer of ~150 nm thickness were grown on MgO(110) and MgO(001) substrates by RF-cathode sputtering in an oxygen atmosphere. X-ray diffraction studies have shown that the obtained films have no unit cell strain, while for barium-strontium niobate film on an MgO(110) substrate it has been found for the first time that the [001] polar axis lies in the interface plane with the substrate. It is shown that the films differ significantly in surface morphology, dielectric and ferroelectric properties measured in the out-of-plane direction. Keywords: thin films, barium-strontium niobate, SBN, MgO(110) substrate.
  1. M.H. Francombe. Acta Cristallogr. 13, 131 (1960)
  2. Yu.S. Kuzminov, Segnetoelektricheskie kristally dlya upravleniya lazernym izlucheniem, Nauka, M., (1982), 400 s. (in Russian)
  3. A.A. Ballman, H. Brown. J. Cryst. Growth 1, 5, 311 (1967)
  4. N.S. VanDamme, A.E. Sutherland, L. Jones, K. Bridger, S.R. Winzer. J. Am. Ceram. Soc. 74, 8, 1785 (1991)
  5. S. Podlozhenov, H.A. Graetsch, J. Schneider, M. Ulex, M. Wohlecke, K. Betzler. Acta Crystallogr. B 62, 960 (2006)
  6. S. Sakamoto, T. Yazaki. Appl. Phys. Lett. 22, 429 (1973)
  7. V.V. Shvartsman, D.C. Lupascu. J. Am. Ceram. Soc. 95, 1, 1 (2012)
  8. E.G. Kostsov. Ferroelectrics 314, 169 (2005)
  9. M. Cuniot-Ponsard. Strontium Barium Niobate Thin Films for Dielectric and Electro-Optic Applications. In Ferroelectrics-Material Aspects / Ed. M. Lallart. InTech, Rijeka, Croatia (2011) P. 497-518
  10. S. Gupta, A. Paliwal, V. Gupta, M. Tomar. Opt. Laser Technol. 122, 105880 (2020)
  11. S. Gupta, A. Paliwal, V. Gupta, M. Tomar. Opt. Laser Technol. 137, 106816 (2021)
  12. S. Ivanov, E.G. Kostsov. IEEE Sens. J. 20, 16, 9011 (2020)
  13. V.N. V'yukhin, S.D. Ivanov. Optoelectron. Instrum. Data Proc. 54, 502 (2018)
  14. S.E. Moon, M.H. Kwak, Y.-T. Kim, H.-C. Ryu, S.-J. Lee, K.-Y. Kang. J. Korean Phys. Soc. 46, 1, 273 (2005)
  15. P.R. Willmott, R. Herger, B.D. Patterson, R. Windiks. Phys. Rev. B 71, 144114 (2005)
  16. A.V. Pavlenko, D.V. Stryukov, L.I. Ivleva, A.P. Kovtun, K.M. Zhidel, P.A. Lykov, FTT 63, 2, 250 (2021). (in Russian)
  17. J. Koo, J.H. Jang, B.-S. Bae. J. Am. Ceram. Soc. 84, 1, 193 (2001)
  18. Y. Xu, C.J. Chen, R. Xu, J.D. Mackenzie. Phys. Rev. B 44, 35 (1991)
  19. M. Cuniot-Ponsard, J.M. Desvignes, B. Ea-Kim, E. Leroy. J. Appl. Phys. 93, 1718 (2003)
  20. I.M. Beskin, S. Kwon, A.B. Posadas, M.J. Kim, A.A. Demkov. Adv. Photon. Res. 2, 10, 2100111 (2021)
  21. M.J. Nystrom, B.W. Wessels, W.P. Lin, G.K. Wong, D.A. Neumayer, T.J. Marks. Appl. Phys. Lett. 66, 1726 (1995)
  22. V.H. Pedersen, A.B. Blichfeld, K. Bakken, D. Chernyshov, T. Grande, M.-A. Einarsrud. Cryst. Growth Des. 22, 10, 5912 (2022)
  23. M.K. Lee, R.S. Feigelson. J. Cryst. Growth 180, 220 (1997).
  24. T.M. Graettinger, S.H. Rou, M.S. Ameen, O. Auciello, A.I. Kingon. Appl. Phys. Lett. 58, 1964 (1991)
  25. A.V. Pavlenko, L.I. Ivleva, D.V. Stryukov, A.P. Kovtun, A.S. Anokhin, P.A. Lykov, FTT 61, 2, 376 (2019). (in Russian)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru