Kaveev A. K.1,2, Fedorov V. V.1,3, Dvoretckaya L. N.1,3, Fedina S. V.1,3, Mukhin I. S.1,3
1Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
3Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
Email: kaveevandrei@yandex.ru, burunduk.uk@gmail.com, liliyabutler@gmail.com, fedina.serg@yandex.ru
We study the growth of nanowire arrays based on InAsP on silicon substrates. It was found that during the growth process two structural phases are formed: a cubic structure of the sphalerite type and a hexagonal structure of the wurtzite type. The epitaxial relations between InAsP and Si were determined: [0001]NWs||[111]Si, [1120]NWs||[110]Si. A decrease of the radial growth rate and the formation of an axial heterojunction were revealed with the formation of thin (<100 nm) segments of the InAs1-xPx solid solution and maintaining a sufficiently high partial pressure of the As flow (at least 50%). Keywords: InAsP, nanowires, molecular beam epitaxy.
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Дата начала обработки статистических данных - 27 января 2016 г.
