Model of breakdown of MOS-structures by the mechanism of anode hydrogen release
Aleksandrov O. V. 1
1St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
Email: Aleksandr_ov@mail.ru
A quantitative model of the breakdown of MOS-structures with relatively thick (10-100 nm) gate dielectric by the mechanism of anode hydrogen release from interphase boundary Si-SiO2 is proposed. The breakdown delay time is determined by dispersion transport and accumulation of hydrogen ions in the gate dielectric. It is shown that at a high concentration of hydrogen in MOS structures and electric field strength of less than ~10 MV/cm, the model satisfactorily describes breakdown delay times significantly shorter than those expected from the 1/E model. At higher field strengths, the breakdown is described by the anode hole injection model. Keywords: MOS-structure, breakdown, anode hydrogen release, anode hole injection.
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