Ruzhevich M. S.
1, Mynbaev K. D.
1,2, Bazhenov N. L.
2, Varavin V. S.
3, Remesnik V. G.
3, Mikhailov N. N.
3, Yakushev M. V.
31ITMO University, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
3Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: max.ruzhevich@niuitmo.ru, mynkad@mail.ioffe.ru, bazhnil.ivom@mail.ioffe.ru, varavin@isp.nsc.ru, remesnik@isp.nsc.ru, mikhailov@isp.nsc.ru, yakushev@isp.nsc.ru
The results of a study of photoluminescence (PL) of epitaxial films of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te solid solutions grown by molecular beam epitaxy are presented. A comparison of PL data with the results of optical transmission measurements and structural and microscopic studies showed that in terms of the degree of disorder of the solid solution, the studied Hg0.7Cd0.3Te films are not inferior in quality to the material synthesized by other methods. For Hg0.3Cd0.7Te films, PL data revealed significant composition fluctuations and the presence of acceptor states, which indicates the need to optimize the technology Keywords: solid solutions, HgCdTe, photoluminescence, defects.
- M. Kopytko, A. Rogalski. Sensors Actuators: A. Phys., 339, 113511 (2022). DOI: 10.1016/j.sna.2022.113511
- J. Chen, J. Wang, X. Li, J. Chen, F. Yu, J. He, J. Wang, Z. Zhao, G. Li, X. Chen, W. Lu. Sensors, 22 (2), 677 (2022). DOI: 10.3390/s22020677
- A. Drago, E. Pace, S. Bini, M. Cestelli Guidi, F. Cioeta, A. Marcelli, V. Bocci. J. Instrument., 18 (2), C02012 (2023). DOI: 10.1088/1748-0221/18/02/C02012
- D. Yang, J. Lin, C. Lin, X. Wang, S. Zhou, H. Guo, R. Ding, L. He. Solid-State Electron., 205, 108665 (2023). DOI: 10.1016/j.sse.2023.108665
- V.V. Utochkin, A.A. Dubinov, M.A. Fadeev, V.V. Rumyantsev, N.N. Mikhailov, S.A. Dvoretsky, V.I. Gavrilenko, S.V. Morozov. Semiconductors, 55 (12), 899 (2021). DOI: 10.21883/FTP.2021.10.51445.49
- N. Mokdad, F.Z. Mami, N. Boukli-Hacene, K. Zitouni, A. Kadri. J. Appl. Phys., 132 (17), 175702 (2022). DOI: 10.1063/5.0101924
- V.V. Rumyantsev, A.A. Razova, M.A. Fadeev, V.V. Utochkin, N.N. Mikhailov, S.A. Dvoretsky, V.I. Gavrilenko, S.V. Morozov. Opt. Eng., 60 (8), 082007 (2021). DOI: 10.1117/1.OE.60.8.082007
- M.V. Yakushev, V.S. Varavin, V.G. Remesnik, D.V. Marin. Semiconductors, 48 (6), 767 (2014)
- M.S. Ruzhevich, K.D. Mynbaev, N.L. Bazhenov, M.V. Dorogov, S.A. Dvoretsky, N.N. Mikhailov, V.G. Remesnik, I.N. Uzhakov Phys. Sol. State, 65 (3), 402 (2023). DOI: 10.21883/FTT.2023.03.54738.552
- D.A. Andryushchenko, M.S. Ruzevich, A.M. Smirnov, N.L. Bazhenov, K.D. Mynbaev, V.G. Remesnik. Semiconductors, 56 (13), 2063 (2022). DOI: 10.21883/FTP.2021.11.51558.9689
- K.D. Mynbayev, N.L. Bazhenov, A.M. Smirnov, N.N. Mikhailov, V.G. Remesnik, M.V. Yakushev. Semiconductors, 54 (12), 1561 (2020). DOI: 10.21883/FTP.2020.12.50229.9497
- C.R. Becker, V. Latussek, A. Pfeuffer-Jeschke, G. Landwehr, L.W. Molenkamp. Phys. Rev. B, 62 (15), 10353 (2000). DOI: 10.1103/PhysRevB.62.10353
- A. Lusson, F. Fuchs, Y. Marfaing. J. Crys. Growth, 101 (1-4), 673 (1990). DOI: 10.1016/0022-0248(90)91056-V
- P. Gille, K.H. Herrmann, N. Puhlmann, M. Schenk, J.W. Tomm, L. Werner. J. Cryst. Growth, 86 (1-4), 593 (1988). DOI: 10.1016/0022-0248(90)90781-F
- C.R. Becker, T.N. Casselman, C.H. Grein, S. Sivananthan. Molecular Beam Epitaxy of HgCdTe Materials and Detectors, Chap. 6.04 in: Comprehensive Semiconductor Science and Technology, ed. by P. Bhattacharya, R. Fornari and H. Kamimura (Elsevier, Amsterdam, 2011) v. 6, p. 128. DOI: 10.1016/B978-0-44-453153-7.00015-8
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