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Thyristor switches based on hetero and homostructures (Al)GaAs/GaAs for generating high-frequency nanosecond current pulses
Slipchenko S.O. 1, Podoskin A. A.
1, Shushkanov I.V.1, Krychkov V.A.1, Rizaev A.E.1, Kondratov M.I.1, Grishin A.E.1, Pikhtin N.A.1, Bagaev T.A.1,2, Svetogorov V.N.2, Ladugin M.A.2, Marmalyuk A.A.2, Simakov V.A.2
1Ioffe Institute, St. Petersburg, Russia
2“Polyus” Research Institute of M.F. Stelmakh Joint Stock Company, Moscow, Russia
2“Polyus” Research Institute of M.F. Stelmakh Joint Stock Company, Moscow, Russia
Email: podoskin@mail.ioffe.ru, SergHPL@mail.ioffe.ru
Low-voltage thyristor current switches for generating high-frequency sequences of current pulses have been developed and investigated. The maximum frequency was demonstrated for the GaAs homo-thyristor (HeT) structure, reaching 400 kHz at 35 V. The heterostructure thyristor with an AlGaAs barrier (HoT) exhibited a lower holding current, resulting in a maximum frequency of 170 kHz at 10 V. For maximum voltages of 55 V, the frequencies reached 55 kHz and 40 kHz for the HoT and HeT structures, respectively, generating current pulses with a duration of 3.5 ns and an amplitude of 24 A in the circuit. Keywords: Thyristor, current switch.
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