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Contact systems for photovoltaic converters based on InGaAsP/InP
Russian version
Potapovich N.S. 1, Malevskaya A. V.1, Soldatenkov F.Yu.1, Khvostikov V.P.1
1Ioffe Institute, St. Petersburg, Russia
Email: nspotapovich@mail.ioffe.ru, amalevskaya@mail.ioffe.ru
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The investigations of the influence of the formation modes of contact systems based on Pd-Ge-Au and Au(Ge)-Ni-Au to n-type InGaAsP and NiCr-Ag-Au to p-type InGaAsP and InP on the value of specific contact resistance have been carried out. Low values of specific contact resistance of ~ 10-7 Ω· cm2 were achieved when using the Au(Ge)-Ni-Au contact system (annealing temperature - 420-440oC) and ~ 10-6 Ω· cm2 when deposition of Pd-Ge-Au (at low annealing temperatures <200oC) for n-InGaAsP solid solution compositions with low phosphorus content. For p-InGaAsP samples with a NiCr-Ag-Au contact system, the minimum contact resistance was ~ 10-6 Ω· cm2 at annealing temperatures of 460oC. Keywords: Contact systems, InGaAsP/InP, thermal annealing,heterostructures, photovoltaic cells.
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