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Estimation of the Inhomogeneity of the Current Density and Temperature Distribution in the Structures of Bipolar and Heterobipolar High-Frequency and Ultrahigh-Frequency Transistors by Recombination Emission
Sergeev V. A.
1, Frolov I. V.
1, Kazankov A. A.
2
1Kotel’nikov Institute of Radio Engineering and Electronics (Ulyanovsk Branch), Russian Academy of Sciences, Ulyanovsk, Russia
2Ulyanovsk State Technical University, Ulyanovsk, Russia
2Ulyanovsk State Technical University, Ulyanovsk, Russia
Email: sva@ulstu.ru, ilya-frolov88@mail.ru, kazankov1992@gmail.com
The parameters of recombination emission arising in the structures of bipolar transistors in pulsed and stationary operating modes are investigated. The brightness distribution profiles of the recombination emission of the structure, which made it possible to evaluate the inhomogeneity of the current density distribution along the metallization tracks, were obtained when bipolar transistors were turned on in diode mode. Using KT504A transistors as an example, it is shown that the brightness profiles of the recombination emission of the emitter junction in the diode regime are well described by expressions for the distribution of current density along the metallization tracks. Keywords: Bipolar and heterobipolar transistors, recombination emission, current distribution, inhomogeneity.
- V.A. Sergeev. Izvestiya vuzov. Elektronika, 3, 22 (2005) (in Russian)
- V.A. Sergeev. Izvestiya Samarskogo nauchnogo tsentra RAN, 2 (344) (2005) (in Russian)
- V.A. Sergeev, A.M. Khodakov. J. Commun. Technol. and Electron., 67 (11), 1400 (2022). DOI: 10.1134/S1064226922110122
- M. Harris, B. Wagner, S. Halpern, M. Dobbs, C. Pagel, B. Stuffle, J. Henderson. 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No. 99CH36296), p. 127. DOI: 10.1109/RELPHY.1999.761603
- F. Schuermeyer, R. Fitch, R. Dettmer, J. Gillespie, C. Bozada, K. Nakano, J. Sewell, J. Ebel, T. Jenkins, L.L. Liou. Proc. 2000 IEEE/Cornell Conference on High Performance Devices (Cat. No. 00CH37122) (Ithaca, NY., USA, 2000), p. 45. DOI: 10.1109/CORNEL.2000.902518
- V. Sergeev, I. Frolov, O. Radaev.2022 VIII Int. Conf. on Information Technology and Nanotechnology (ITNT) (Samara, 2022), p. 1
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