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- 2023
- 2022
Design and efficiency correlation of IR light-emitting diodes based on quantum dimensional heterostructures AlGaAs
Malevskaya A. V.
1, Kalyuzhnyy N. A.
1, Malevskii D. A.
1, Pokrovskii P. V.
1, Andreev V. M.
1
1Ioffe Institute, St. Petersburg, Russia
Email: amalevskaya@mail.ioffe.ru, Nickk@mail.ioffe.ru, dmalevsky.scell@mail.ioffe.ru, P.Pokrovskiy@mail.ioffe.ru, vmandreev@mail.ioffe.ru
Investigation of infra-red (850 nm) light-emitting diodes based on AlGaAs quantum dimensional heterostructures, grown by the MOCVD technique, with multiple quantum wells in active region and with internal reflectors: Bragg reflector, additional "reflective" layer Al0.9Ga0.1As or back silver mirror, was carried out. Two types of post-growth technology: LED manufacturing planar technology on growth substrate n-GaAs and "transfer" technology of grown heterostructure on carrier-substrate p-GaAs and following etching of growth substrate, were investigated. Maximum external quantum efficiency (EQE > 37%) at current 0.1-0.2 A was achieved in LED based on heterostructure with Bragg reflector and additional Ag-mirror, built-in LED by heterostructure "transfer" method on p-GaAs carrier with the use of argentum paste. Maximum optical power (Popt = 275 mW) at current I = 1.2 A was achieved in LEDs, manufactured by "transfer" method with the use of Au + In alloy. Keywords: light-emitting diode, AlGaAs/GaAs heterostructure, Bragg reflector, quantum wells.
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