Shuman V. B.1, Astrov Yu. A.1, Lodygin A. N.1, Portsel L. M.1
1Ioffe Institute, St. Petersburg, Russia
Email: leonid.portsel@mail.ioffe.ru
A method for determining the solubility of magnesium (Mg) in silicon with oxygen content greater than 3·1017 cm-3 is proposed. The method is based on the study the intensity of oxygen absorption band 1106 cm-1 during long-time diffusion annealing of silicon. As a result of optically inactive complex MgO formation, absorption and concentration of O decreases. The difference between O concentration before and after diffusion corresponds to concentration of Mg in the crystal. The Mg solubility in dislociation-free Si at 1250oC equal to (2.5±0.19)·1017 cm-3 is determined. This value coincides with the result obtained earlier by secondary ion mass spectrometry in oxygen-free Si. Keywords: silicon doping, diffusion, impurity centers.
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