Using of ion-beam etching of free-standing films for the development of wavefront correctors in the EUV wavelength range
Tsybin N. N.1, Kluenkov E. B.1, Lopatin A. Ya.1, Luchin V. I.1, Pestov A. E.1, Chkhalo N. I.1
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: tsybin@ipmras.ru, kluenkov@ipmras.ru, lopatin@ipmras.ru, luchin@ipmras.ru, aepestov@ipmras.ru, chkhalo@ipmras.ru
A method for creating free-standing film elements designed to correct wavefront aberrations in optical systems in the spectral region of the soft X-ray and extreme ultraviolet range has been proposed. Samples of film structures with a uniform transmission across the aperture of at least 60% at a wavelength of 13.5 nm, serving as the initial basis for the formation of phase correctors with a characteristic value of phase modulation corresponding to a change in the optical path length of ~1 nm, were manufactured. The possibility of using ion etching to locally change the thickness of free-standing multilayer films has been demonstrated. Keywords: multilayer free-standing films, wavefront corrector, ion beam etching, soft X-ray and extreme ultraviolet wavelengths.
- M. Born, E. Volf. Osnovy optiki (Nauka, M., 1973) (in Russian)
- V. Bakshi. EUV Lithography (SPIE, John Wiley \& Sons, Inc., 2008)
- R. Saathof, G.J.M. Schutten, J.W. Spronck, R.H.M. Schmidt. Precision Engineer., 41, 102 (2015). DOI: 10.1016/j.precisioneng.2015.03.004
- M. Singh, M.F. Bal, J.J.M. Braat, D. Joyeux, U. Dinger. Appl. Opt., 42 (10), 1847 (2003). DOI:10.1364/ao.42.001847
- M. Yamamoto. Nucl. Instrum. Methods A, 467-468 (2), 1282 (2001). DOI: 10.1016/S0168-9002(01)00640-4
- B. Bittner, N. Wabra, S. Schneider et al. Patent DE102012202057B4. 10.02.2012
- N.I. Chkhalo, M.N. Drozdov, S.A. Gusev, E.B. Kluenkov, A.Ya. Lopatin, V.I. Luchin, N.N. Salashchenko, L.A. Shmaenok, N.N. Tsybin, B.A. Volodin. Proc. SPIE, 8076, 80760O-1 (2011). DOI: 10.1117/12.886781
- N.I. Chkhalo, M.N. Drozdov, E.B. Kluenkov, A.Ya. Lopatin, V.I. Luchin, N.N. Salashchenko, N.N. Tsybin, L.A. Sjmaenok, V.E. Banine, A.M. Yakunin. J. Micro/Nanolith. MEMS MOEMS., 11 (2), 021115 (2012). DOI: 10.1117/1.JMM.11.2.021115
- S.Yu. Zuev, A.Ya. Lopatin, V.I. Luchin, N.N. Salashchenko, N.N. Tsybin, N.I. Chkhalo. Russ. Microelectron., 52 (5), 354 (2023) (in Russian). DOI: 10.31857/S0544126923700539
- A.D. Akhsakhalyan, E.B. Kluenkov, A.Ya. Lopatin, V.I. Luchin, A.N. Nechay, A.E. Pestov, V.N. Polkovnikov, N.N. Salashchenko, M.V. Svechnikov, M.N. Toropov, N.N. Tsybin, N.I. Chkhalo, A.V. Shcherbakov. J. Surf. Investigation: X-ray, Synchrotron and Neutron Techniques, 11 (1), 1 (2017). DOI:10.1134/S1027451017010049
- N.N. Salashchenko, N.I. Chkhalo, N.A. Dyuzhev. Poverkhnost. Rentgen. sinkhrotr. i neitron. issled. 10, 10 (2018). (in Russian). DOI: 10.1134/S0207352818100165
- N.I. Chkhalo, N.N. Salashchenko. AIP Advances, 3, 082130 (2013). DOI: 10.1063/1.4820354
- Electronic source. Available at: https://cxro.lbl.gov/
- M.S. Bibishkin, N.I. Chkhalo, S.A. Gusev, E.B. Kluenkov, A.Y. Lopatin, V.I. Luchin, A.E. Pestov, N.N. Salashchenko, L.A. Shmaenok, N.N. Tsybin, S.Y. Zuev. Proc. SPIE, 7025, 702502 (2008). DOI:10.1117/12.802347
- N.I. Chkhalo, E.B. Kluenkov, A.E. Pestov, V.N. Polkovnikov, D.G. Raskin, N.N. Salashchenko, L.A. Suslov, M.N. Toropov. Nucl. Instrum. Methods Phys. Res. A, 603 (1-2), 62 (2009). DOI: 10.1016/j.nima.2008.12.160
- M.S. Bibishkin, I.G. Zabrodin, I.A. Kas'kov, E.B. Kluenkov, A.E. Pestov, N.N. Salashchenko, D.P. Tchekhonadskikh, N.I. Chkhalo, L.A. Shmaenok. Izvestiya AN. Ser. fiz., 68 (4), 560 (2004) (in Russian)
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