Physics of the Solid State
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Growth of epitaxial thin films of Sr2IrO4 antiferromagnet for spintronics heterostructures
Moskal I. E.1, Kislinskii Yu. V.
1, Petrzhik A. M.1, Ovsyannikov G. A.1, Dubitskiy N. V.2
1Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
2MIREA - Russian Technological University, Moscow, Russia
2MIREA - Russian Technological University, Moscow, Russia
Email: yulii@hitech.cplire.ru, ivan.moscal@yandex.ru
A comparison of the parameters of epitaxial thin films of strontium iridate Sr2IrO4 obtained by two methods: cathode sputtering on direct current and cathode sputtering on pulsed current is presented. The resistive and crystallographic characteristics of the obtained thin-film samples are compared. The models of electronic transport of the obtained films are discussed: thermal activation, typical for a band dielectric, and three-dimensional hopping conductivity, characteristic of a Mott hopping conductor. Keywords: antiferromagnetism, strontium iridate, epitaxial thin films.
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