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Maximum magnetic field dependence of longitudinal magnetoresistance in thin bismuth films
Russian version
Demidov E. V.1, Demidova N. S.1, Suslov A. V.1, Grabov V. M.1, Komarov V. A.1, Krushelnitckii A. N.1, Gerega V. A.1
1Herzen State Pedagogical University of Russia, St. Petersburg, Russia
Email: demidov_evg@mail.ru
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The longitudinal magnetoresistance in bismuth films was studied as a function of thickness and deformation in the film plane. The presence of a maximum turning into a negative magnetoresistance was found on the magnetofield dependences of the longitudinal magnetoresistance. It was shown that the difference of the sizes of the crystallites of the films makes a much smaller contribution to the displacement of the maximum by the magnetofield dependence than the effect of deformation in the film plane because of the difference of the coefficient of thermal expansion of bismuth and the substrate material. The different nature of the maximum formation for films with a thickness greater than and less than 100 nm was shown. Keywords: Thin films, bismuth, longitudinal magnetic resistance, quantum limit in magnetic field, chiral anomaly, Weyl semimetal, weak electron localization effect.
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