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Electroluminescence of diamond NV-centers at temperatures 450 oC-680 oC
Russian version
S.G. Buga1,2, N.V. Kornilov1, M.S. Kuznetsov1, N.V. Luparev1, D.D. Prikhodko1, S.A. Tarelkin1, T.E. Drozdova1, S.I. Zholudev1, S.A. Nosukhin1, V.D. Blank1
1Scientific Research Center Kurchatov Institute−TISNUM, Moscow, Russia
2Moscow Institute of Physics and Technology, Dolgoprudny, Moscow oblast, Russia
Email: buga@tisnum.ru
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Electroluminescence spectra of a diamond light-emitting p-i-n-diode based on a nitrogen-doped synthetic single crystal of diamond (n-type of conductance), grown by high pressure and temperature growth method, and thin, grown by method of homoepitaxial growth from a gas phase, i-layer of diamond with nitrogen concentration 1014-1015 cm-3 with nitrogen-vacancy and silicon-vacancy optically active centers, and a layer heavily doped with boron (p-type of conductance), were studied. To increase the concentration of luminescence centers, the diode was irradiated with an electron beam with energy of 3 MeV at dose 5·1017 cm-2 with subsequent annealing at T=800 oC in vacuum for 2 h. Electroluminescence spectra were measured at temperatures in the range of 450 oC-680 oC both before and after irradiation with electrons. Before irradiation with electrons, the maximum of the electroluminescence band was observed in the area of wavelengths 610-680 nm, depending on temperature, voltage and current of diode, and after irradiation with electrons and annealing - at wavelength of 680 nm at T=575 oC-600 oC. Maximum integral brightness of emission of nitrogen-vacancy centers ~1012 photon/s was observed at T=575 oC after irradiation with electrons and annealing. Keywords: nitrogen-doped diamond, NV-centers, diamond p-i-n-diode, electroluminescence, high temperatures.
  1. A. Lohrmann, S. Pezzagna, I. Dobrinets, P. Spinicelli, V. Jacques, J.-F. Roch, J. Meijer, A.M. Zaitsev. Appl. Phys. Lett., 99, 251106 (2011). DOI: 10.1063/1.3670332
  2. N. Mizuochi, T. Makino, H. Kato, D. Takeuchi, M. Ogura, H. Okushi, M. Nothaft, P. Neumann, A. Gali, F. Jelezko, J. Wrachtrup, S. Yamasaki. Nat. Phot., 6, 299 (2012). DOI: 10.1038/NPHOTON.2012.75
  3. H. Kato, M. Wolfer, C. Schreyvogel, M. Kunzer, W. Muller-Sebert, H. Obloh, C. Nebel. Appl. Phys. Lett., 102 (15), 151101 (2013). DOI: 10.1063/1.4801871
  4. D.Yu. Fedyanin, M. Agio. New J. Phys., 18, 073012 (2016). DOI: 10.1088/1367-2630/18/7/073012
  5. I.A. Khramtsov, M. Agio, D.Y. Fedyanin. Phys. Rev. Appl., 8, 024031 (2017)
  6. I.A. Khramtsov, D.Yu. Fedyanin. Phys. Rev. Appl., 12, 024013 (2019). DOI: 10.1103/PhysRevApplied.12.024013
  7. I.A. Khramtsov, D.Yu. Fedyanin. Semicond. Sci. Technol., 34, 03LT03 (2019). DOI: 10.1088/1361-6641/ab0569
  8. I.A. Khramtsov, D.Y. Fedyanin. Materials, 12 (12), 1972 (2019). DOI: 10.3390/ma12121972
  9. M.A. Lobaev, D.B. Radishev, S.A. Bogdanov, A.L. Vikharev, A.M. Gorbachev, V.A. Isaev, S.A. Kraev, A.I. Okhapkin, E.A. Arhipova, M.N. Drozdov, V.I. Shashkin. Phys. Stat. Solidi RRL, 2000347 (2020). DOI: 10.1002/pssr.202000347
  10. M. Haruyama, H. Kato, M. Ogura, Y. Kato, D. Takeuchi, S. Yamasaki, T. Iwasaki, H. Morishita, M. Fujiwara, N. Mizuochi, T. Makino. Appl. Phys. Lett., 122, 072101 (2023). DOI: 10.1063/5.0138050
  11. S.G. Buga, N.V. Kornilov, M.S. Kuznetsov, N.V. Luparev, D.D. Prikhodko, S.A. Tarelkin, T.E. Drozdova, V.D. Blank. Pisma v ZhTF (in Russian), 50 (5), 39 (2024). DOI: 10.61011/PJTF.2024.05.57184.19778
  12. S.G. Buga, A.S. Galkin, M.S. Kuznetsov, N.V. Kornilov, N.V. Luparev, D.D. Prikhodko, S.A. Tarelkin, V.D. Blank. Izv. vuzov. Khimiya i khim. tekhnologiya, 65 (11), 27 (2022) (in Russian). DOI: 10.6060/ivkkt.20226511.7y
  13. S.G. Buga, G.M. Kvashnin, M.S. Kuznetsov, N.V. Kornilov, N.V. Luparev, D.D. Prikhodko, S.A. Terentiev, V.D. Blank. Appl. Phys. Lett., 124, 102107 (2024). DOI: 10.1063/5.0180183
  14. M. Katagiri, J. Isoya, S. Koizumi, H. Kanda. Appl. Phys. Lett., 85, 6365 (2004). DOI: 10.1063/1.1840119
  15. I. Stenger, M.-A. Pinault-Thaury, T. Kociniewski, A. Lusson, E. Chikoidze, F. Jomard, Y. Dumont, J. Chevallier, J. Barjonet, J. Appl. Phys., 114, 073711 (2013). DOI: 10.1063/1.4818946
  16. R.G. Farrer. Sol. St. Comm., 7, 685 (1969). DOI: 10.1016/0038-1098(69)90593-6
  17. F.J. Heremans, G.D. Fuchs, C.F. Wang, R. Hanson, D.D. Awschalom. Appl. Phys. Lett., 94, 152102 (2009). DOI: 10.1063/1.3120225
  18. T. Makino, K. Yoshino, N. Sakai, K. Uchida, S. Koizumi, H. Kato, D. Takeuchi, M. Ogura, K. Oyama, T. Matsumoto, H. Okushi, S. Yamasaki. Appl. Phys. Lett., 99, 061110 (2011). DOI: 10.1063/1.3625943
  19. D. Kuwabara, T. Makino, D. Takeuchi, H. Kato, M. Ogura, H. Okushi, S. Yamasaki. Jpn. J. Appl. Phys., 53, 05FP02 (2014). DOI: 10.7567/JJAP.53.05FP02
  20. M. Attrash, O. Shtempluck, E. Buks, J. Appl. Phys., 133 (9), 094401 (2023). DOI: 10.1063/5.0128069
  21. A.G. Burachenko, V.S. Ripenko, E.I. Lipatov, K.P. Artemov, A.A. Krylov. Izv. vuzov. Fizika, 65 (11), 19 (2022) (in Russian). DOI: 10.56761/EFRE2022.N4-O-909501
  22. X.-D. Chen, C.-H. Dong, F.-W. Sun, C.-L. Zou, J.-M. Cui, Z.-F. Han, G.-C. Guo. Appl. Phys. Lett., 99, 161903 (2011). DOI: 10.1063/1.3652910
  23. S. Lagomarsino, F. Gorelli, M. Santoro, N. Fabbri, A. Hajeb, S. Sciortino, L. Palla, C. Czelusniak, M. Massi, F. Taccetti, L. Giuntini, N. Gelli, D.Yu. Fedyanin, F.S. Cataliotti, C. Toninelli, M. Agio. AIP Adv., 5, 127117 (2015). DOI: 10.1063/1.4938256
  24. C. Kurtsiefer, S. Mayer, P. Zarda, H. Weinfurter. Phys. Rev. Lett., 85, 290 (2000)
  25. K. Nemoto, M. Trupke, S.J. Devitt, B. Scharfenberger, K. Buczak, J. Schmiedmayer, W.J. Munro. Sci. Rep., 6, 26284 (2016). DOI: 10.1038/srep26284
  26. D. Genin, E. Lipatov, M. Shulepov, V. Vins, A. Yelisseyev, I. Izmailov, A. Savvin, A. Dormidonov. Stat. Sol. RRL, 18, 2300062 (2024). DOI: 10.1002/pssr.202300062
  27. L. Lindner, F.A. Hahl, T. Luo, G.N. Antonio, X. Vidal, M. Rattunde, T. Ohshima, J. Sacher, Q. Sun, M. Capelli, B.C. Gibson, A.D. Greentree, R. Quay, J. Jeske. Sci. Adv., 10, eadj3933 (2024). DOI: 10.1126/sciadv.adj3933
  28. S.G. Buga, G.M. Kvashnin, M.S. Kuznetsov, N.V. Kornilov, N.V. Luparev, M. Yao. FTP, Semiconductors, 57, 360 (2023) (in Russian). DOI: 10.21883/FTP.2023.05.56206.4748
  29. Z.I. Alferov, V.B. Khalfin, R.F. Kazarinov. Sov. Phys. Solid State, 8, 2480 (1967)
  30. R.F. Kazarinov, R.A. Suris. Sov. Phys. Semicond., 9, 6 (1975)
  31. J. Meijer, B. Burchard, M. Domhan, C. Wittmann, T. Gaebel, I. Popa, F. Jelezko, J. Wrachtrup. Appl. Phys. Lett., 87, 261909 (2005)
  32. J.-M. Cui, X.-D. Chen, L.-L. Fan, Z.-J. Gong, C.-W. Zou, F.-W. Sun, Z.-F. Han, G.-C. Guo. Chin. Phys. Lett., 29 (3), 036103 (2012). DOI: 10.1088/0256-307X/29/3/036103
  33. G. Davies, S.C. Lawson, A.T. Collins, A. Mainwood, S.J. Sharp. Phys. Rev. B, 46, 13157 (1992)
  34. Y. Mita. Phys. Rev. B, 53, 11360 (1996)
  35. J. Martin, R. Wannemacher, J. Teichert, L. Bischoff, B. Kohler. Appl. Phys. Lett., 75, 3096 (1999)
  36. F. Waldermann, P. Olivero, J. Nunn, K. Surmacz, Z. Wang, D. Jaksch, R. Taylor, I. Walmsley, M. Draganski, P. Reichart, A. Greentree, D. Jamieson, S. Prawer. Diamond Relat. Mater., 16, 1887 (2007)
  37. T. Wee, Y. Tzeng, C. Han, H. Chang, W. Fann, J. Hsu, K. Chen, Y. Yu. J. Phys. Chem. A, 111, 9379 (2007)
  38. S.D. Trofimov, S.A. Tarelkin, S.V. Bolshedvorskii, V.S. Bormashov, S.Yu. Troshchiev, A.V. Golovanov, N.V. Luparev, D.D. Prikhodko, K.N. Boldyrev, S.A. Terentiev, A.V. Akimov, N.I. Kargin, N.S. Kukin, A.S. Gusev, A.A. Shemukhin, Y.V. Balakshin, S.G. Buga, V.D. Blank. Opt. Mater. Express, 10 (1), 198 (2019)
  39. V.M. Acosta, E. Bauch, M.P. Ledbetter, C. Santori, K.-M.C. Fu, P.E. Barclay, R.G. Beausoleil, H. Linget, J.F. Roch, F. Treussart, S. Chemerisov, W. Gawlik, D. Budker. Phys. Rev. B, 80, 115202 (2009). DOI: 10.1103/physrevb.80.115202
  40. J. Schwartz, S. Aloni, D.F. Ogletree, T. Schenkel. New J. Phys., 14 (4), 043024 (2012)
  41. S.A. Bogdanov, A.M. Gorbachev, D.B. Radischev, A.L. Vikharev, M.A. Lobaev, S.A. Gusev, D.A. Tatarsky, S.V. Bolshedvorsky, A.V. Akimov, V.V. Chernov. Pisma v ZhTF, 45 (6), 36 (2019) (in Russian)
  42. S.Yu. Troschiev, S.V. Bolshedvorsky, S.D. Trofimov, N.V. Luparev, S.A. Nosukhin, S.G. Buga. Izv. vuzov. Khimiya i khim. tekhnol., 63 (12) (in Russian), 16 (2020). DOI: 10.6060/ivkkt.20206312.12y
  43. S.V. Bolshedvorskii, S.A. Tarelkin, V.V. Soshenko, I.S. Cojocaru, O.R. Rubinas, V.N. Sorokin, V.G. Vins, A.N. Smolyaninov, S.G. Buga, A.S. Galkin, T.E. Drozdova, M.S. Kuznetsov, S.A. Nosukhin, A.V. Akimov. Phys. Status Solidi RRL, 17 (4), 2200415 (2023). DOI: 10.1002/pssr.202200415
  44. A. Savvin, A. Dormidonov, E. Smetanina, V. Mitrokhin, E. Lipatov, D. Genin, S. Potanin, A. Yelisseyev, V. Vins. Nat. Comm., 12, 7118 (2021). DOI: 10.1038/s41467-021-27470-7
  45. E.I. Lipatov, D.E. Genin, M.A. Shulepov, E.N. Telminov, A.D. Savvin, A.P. Eliseev, V.G. Vins. Kvant. elektron. (in Russian), 52 (5), 465 (2022)
  46. N.B. Manson, J.P. Harrison. Diam. Relat. Mater., 14, 1705 (2005). DOI: 10.1016/j.diamond.2005.06.027
  47. T. Gaebel, M. Domhan, C. Wittmann, I. Popa, F. Jelezko, J. Rabeau, J. Wrachtrup. Appl. Phys. B, 82 (2), 243 (2005). DOI: 10.1007/s00340-005-2056-2
  48. B. Grotz, M.V. Hauf, M. Dankerl, B. Naydenov, S. Pezzagna, J. Meijer, J.A. Garrido. Nature Commun., 3, Art. num. 729 (2012). DOI: 10.1038/ncomms1729
  49. Y. Doi, T. Fukui, H. Kato, T. Makino, S. Yamasaki, T. Tashima, H. Morishita, S. Miwa, F. Jelezko, Y. Suzuki, N. Mizuochi. Phys. Rev. B, 93, 081203(R) (2016). DOI: 10.1103/PhysRevB.93.081203
  50. Y.N. Palyanov, Y.M. Borzdov, A.F. Khokhryakov, I.N. Kupriyanov, A.G. Sokol. Cryst. Growth Des., 10, 3169 (2010). DOI: 10.1021/cg100322p
  51. U.F.S. D'Haenens-Johansson, J.E. Butler, A.N. Katrusha. Rev. Miner. Geochem., 88, 689 (2022). DOI: 10.2138/rmg.2022.88.13
  52. M.A. Lobaev, D.B. Radishev, A.L. Vikharev, A.M. Gorbachev, A. Bogdanov, V.A. Isaev, S.A. Kraev, A.I. Okhapkin, E.A. Arkhipova, E.V. Demidov, M.N. Drozdov. Phys. Status Solidi RRL, 17, 2200432 (2023). DOI: 10.1002/pssr.202200432
  53. V.S. Bormashov, S.A. Terentiev, S.G. Buga, S.A. Tarelkin, A.P. Volkov, D.V. Teteruk, N.V. Kornilov, V.D. Blank. Diam. Rel. Mat., 75, 78 (2017). DOI: 10.1016/j.diamond.2017.02.006
  54. S. Tarelkin, V. Bormashov, S. Buga, A. Volkov, D. Teteruk, N. Kornilov, M. Kuznetsov, S. Terentiev, A. Golovanov, V. Blank. Phys. Status Solidi A, 212, 2621 (2015). DOI: 10.1002/pssa.201532213

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