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CVD diamond structures with a p-n junction --- diodes and transistors
Russian version
Lobaev M. A. 1, Radishev D. B.1, Vikharev A. L.1, Gorbachev A. M.1, Bogdanov S. A.1, Isaev V. A.1, Kraev S. A.1, Okhapkin A. I. 1, Arkhipova E. A. 1, Yunin P.A. 1, Vostokov N. V.1, Demidov E. V.1, Drozdov M. N.1
1Federal Research Center A.V. Gaponov-Grekhov Institute of Applied Physics of the Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: lobaev@ipfran.ru, dibr@ipfran.ru, val@ipfran.ru, gorb@ipfran.ru, bogser@ipfran.ru, isaev@ipfran.ru, kraev@ipm.sci-nnov.ru, poa89@ipmras.ru, suroveginaka@ipmras.ru, yunin@ipmras.ru, vostokov@ipm.sci-nnov.ru, drm@ipm.sci-nnov.ru
PDF
The doping of diamond with boron and phosphorus in a plasma chemical reactor with a laminar gas flow was investigated. Diamond layers heavily doped with boron and phosphorus were obtained. The layers had low resistivity with high crystalline perfection. Structures for the formation of electronic devices on diamond have been created on the basis of such layers. Several types of diamond devices have been studied: Schottky diode, pn-Schottky diode, p-i-n-diode and field effect transistor. High values of breakdown fields and current densities in the studied devices have been obtained. Keywords: CVD diamond, diamond structures, Schottky diode, p-i-n-diode, field effect transistor.
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