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Planarization of epilayers HgCdTe grown on CdZnTe substrates by liquid-phase epitaxy
Russian version
Trofimov A. A.1, Denisov I. A.2, Andrusov Yu. B.2, Grishechkin M. B. 2, Tsaregorodtsev D. O. 1, Kosyakova A. M. 1, Kurepin S. A. 3, Smirnov A. S. 3,4, Dolmatov V. Yu. 5
1JSC Orion R&P Association, Moscow, Russia
2 JSC GIREDMET, Moscow, Russia
3V.V. Bakhirev Institute of Mechanical Engineering, JSC,Dzerzhinsk, Nizhny Novgorod region, Russia
4Samara State Technical University, Samara, Russia
5FSUE "SCTB "Technolog", St. Petersburg, Russia
Email: aa-trofimov@yandex.ru, iadenisov@rosatom.ru, andrusovyuri@gmail.com, grimb@mail.ru, deniss.tsaregorodtsev@yandex.ru, usova.am@phystech.edu, kurepin_s@gosniimash.ru, smirnoffas@mail.ru, diamondcentre@mail.ru
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On samples of heteroepitaxial structures HgCdTe grown on isotype substrates CdZnTe by liquid-phase epitaxy at JSC "Giredmet", the possibility of processing the surface of the epitaxial layer of HgCdTe using submicron diamonds of detonation synthesis of domestic production for precision removal of terrace microrelief and obtaining a mirror-smooth surface with a subnano-rough relief suitable for creating IR devices is investigated. Keywords: HgCdTe, IR devices, liquid-phase epitaxy, chemical-mechanical polishing.
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