Technical Physics Letters
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- 2024
- 2023
- 2022
Effect of buffer layer on the characteristics of GaPN layers grown by molecular beam epitaxy on silicon substrates
Nikitina E. V.
1,2, Pirogov E. V.
1, Kaveev A. K.
2, Fedorov V. V.
1
1Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
Email: mail.nikitina@mail.ru, zzzavr@gmail.com, kaveev@mail.ioffe.ru, burunduk.uk@gmail.com
This paper presents a comparative study of the effect of buffer layers on characteristics of GaPN layers synthesized by molecular beam epitaxy on silicon substrates. Structures with a GaP- buffer grown using the "migration-enhanced epitaxy" (MEE-GaP- buffer) and a low-temperature GaP- buffer with a smoothly increasing growth temperature were studied. It was shown that the photoluminescence intensity for the structures with MEE-GaP and optimized GaP- buffer is almost equal, but the stress relaxation mechanisms are different. Keywords: dilute nitrides, heterostructures, molecular beam epitaxy, silicon substrate.
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