The static magnetic susceptibility of SiC/Si hybrid structures grown by the method of coordinated substitution of atoms (MCSA method) at different synthesis times has been measured. The static susceptibility of the samples under study was carried out by using the Faraday method on the Faraday Balance setup based on the MGD 312 FG spectrometer. The results showed that all SiC/Si structures, regardless of the time of their synthesis, are diamagnets (chi<0), and the absolute of their magnetic susceptibility, measured at room temperature, is more than three orders of magnitude higher than the absolute values of the magnetic susceptibility of both silicon and silicon carbide. As a result of the structural studies of both the SiC layer it was found that the main contribution to the diamagnetism of the hybrid structure is made by the transition layer at the SiC/Si interface. It was found that this layer consists of twin ordered layers located parallel to the interface boundary in the (111) plane with a period of 0.252 nm with a triple periodicity, i. e. with an interval of 0.756 nm. Quantum mechanical calculations have shown that these twinned ordered layers contain ordered ensembles of silicon vacancies located along the <110> direction. Keywords: magnetic susceptibility, diamagnetism, silicon carbide on silicon, silicon vacancies, terahertz radiation, nanostructures.

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