Babichev A. V.1, Kharin N. Yu. 2, Kolodeznyi E. S.1, Papylev D. S.1, Mikhailov D. A. 3, Voznyuk G. V. 3, Mitrofanov M. I. 3,4, Dyudelev V. V. 3, Gladyshev A. G.1, Slipchenko S. O. 3, Lyutetsky A. V. 3, Evtikhiev V. P.3, Panevin V. Yu. 2, Karachinsky L. Ya. 1, Novikov I. I. 1, Sokolovsky G. S. 3, Pikhtin N. A. 3, Egorov A. Yu. 1
1ITMO University, St. Petersburg, Russia
2Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
4Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, Saint-Petersburg, Russia
Email: a.babichev@mail.ioffe.ru
The results of stable single-mode lasing in ring-cavity quantum-cascade lasers are presented. Slits of the second-order grating with etching depth varying along the ring cavity are formed by direct ion-beam lithography. Single-mode lasing at the wavelength of 7.65 μm with the signal-to-noise suppression ratio of 22-25 dB just above the lasing threshold has been obtained. Increasing the current pumping by 40 % leads to an increase in the side-mode suppression ratio up to 28 dB. Keywords: superlattices, quantum-cascade laser, selective ring cavity, single-mode lasing, indium phosphide, direct ion-beam lithography.
- A. Andrejew, S. Sprengel, M.-C. Amann, Opt. Lett., 41 (12), 2799 (2016). DOI: 10.1364/ol.41.002799
- G.K. Veerabathran, S. Sprengel, A. Andrejew, M.-C. Amann, Appl. Phys. Lett., 110 (7), 071104 (2017). DOI: 10.1063/1.4975813
- A. Simaz, G. Bohm, A. Koninger, M.A. Belkin, in 2024 IEEE 29th Int. Semiconductor Laser Conf. (ISLC) (IEEE, 2024), p. 1--2. DOI: 10.1109/islc57752.2024.10717418
- A. Babichev, S. Blokhin, A. Gladyshev, L. Karachinsky, I. Novikov, A. Blokhin, M. Bobrov, N. Maleev, V. Andryushkin, E. Kolodeznyi, D. Denisov, N. Kryzhanovskaya, K. Voropaev, V. Ustinov, A. Egorov, H. Li, S.-C. Tian, S. Han, G. Sapunov, D. Bimberg, IEEE Photon. Technol. Lett., 35 (6), 297 (2023). DOI: 10.1109/lpt.2023.3241001
- S.A. Blokhin, A.V. Babichev, A.G. Gladyshev, L.Ya. Karachinsky, I.I. Novikov, A.A. Blokhin, M.A. Bobrov, N.A. Maleev, V.V. Andryushkin, D.V. Denisov, K.O. Voropaev, I.O. Zhumaeva, V.M. Ustinov, A.Yu. Egorov, N.N. Ledentsov, IEEE J. Quantum Electron., 58 (2), 2400115 (2022). DOI: 10.1109/jqe.2022.3141418
- Z. Wang, Z. Wang, Y. Liang, B. Meng, Y.-T. Sun, G. Omanakuttan, E. Gini, M. Beck, I. Sergachev, S. Lourdudoss, J. Faist, G. Scalari, Opt. Express, 27 (16), 22708 (2019). DOI: 10.1364/oe.27.022708
- G. Marschick, S. Isceri, R. Szedlak, H. Moser, J.P. Waclawek, E. Arigliani, R. Weih, W. Schrenk, G. Strasser, B. Hinkov, A. Maxwell Andrews, B. Lendl, B. Schwarz, APL Photon., 9 (10), 100806 (2024). DOI: 10.1063/5.0221189
- G. Marschick, J. Pelini, T. Gabbrielli, F. Cappelli, R. Weih, H. Knotig, J. Koeth, S. Hofling, P. De Natale, G. Strasser, S. Borri, B. Hinkov, ACS Photon., 11 (2), 395 (2024). DOI: 10.1021/acsphotonics.3c01159
- H. Knotig, B. Hinkov, R. Weih, S. Hofling, J. Koeth, G. Strasser, Appl. Phys. Lett., 116 (13), 131101 (2020). DOI: 10.1063/1.5139649
- A. Babichev, E. Kolodeznyi, A. Gladyshev, N. Kharin, V. Panevin, V. Shalygin, G. Voznyuk, M. Mitrofanov, S. Slipchenko, A. Lyutetskii, V. Evtikhiev, L. Karachinsky, I. Novikov, N. Pikhtin, A. Egorov, J. Opt. Technol., 90 (8), 422 (2023). DOI: 10.1364/jot.90.000422
- S. Kacmoli, C.F. Gmachl, Appl. Phys. Lett., 124 (1), 010502 (2024). DOI: 10.1063/5.0180606
- D.H. Wu, M. Razeghi, APL Mater., 5 (3), 035505 (2017). DOI: 10.1063/1.4978810
- D. Stark, M. Beck, J. Faist, APL Photon., 10 (1), 016122 (2025). DOI: 10.1063/5.0245311
- D. Stark, F. Kapsalidis, S. Markmann, M. Bertrand, B. Marzban, E. Gini, M. Beck, J. Faist, Laser Photon. Rev., 18 (8), 2300663 (2024). DOI: 10.1002/lpor.202300663
- Y. Bai, S. Tsao, N. Bandyopadhyay, S. Slivken, Q.Y. Lu, D. Caffey, M. Pushkarsky, T. Day, M. Razeghi, Appl. Phys. Lett., 99 (26), 261104 (2011). DOI: 10.1063/1.3672049
- B. Hinkov, J. Hayden, R. Szedlak, P. Martin-Mateos, B. Jerez, P. Acedo, G. Strasser, B. Lendl, Opt. Express, 27 (10), 14716 (2019). DOI: 10.1364/oe.27.014716
- E. Mujagic, M. Nobile, H. Detz, W. Schrenk, J. Chen, C. Gmachl, G. Strasser, Appl. Phys. Lett., 96 (3), 031111 (2010). DOI: 10.1063/1.3292021
- R. Szedlak, M. Holzbauer, D. MacFarland, T. Zederbauer, H. Detz, A.M. Andrews, C. Schwarzer, W. Schrenk, G. Strasser, Sci. Rep., 5 (1), 16668 (2015). DOI: 10.1038/srep16668
- L. Boulley, T. Maroutian, P. Goulain, A. Babichev, A. Egorov, L. Li, E. Linfield, R. Colombelli, A. Bousseksou, AIP Adv., 13 (1), 015315 (2023). DOI: 10.1063/5.0111159
- M. Piccardo, B. Schwarz, D. Kazakov, M. Beiser, N. Opavcak, Y. Wang, S. Jha, J. Hillbrand, M. Tamagnone, W.T. Chen, A.Y. Zhu, L.L. Columbo, A. Belyanin, F. Capasso, Nature, 582 (7812), 360 (2020). DOI: 10.1038/s41586-020-2386-6
- N.Yu. Kharin, A.V. Babichev, D.A. Mikhailov, E.S. Kolodeznyi, V.V. Dudelev, V.Yu. Panevin, G. Voznyuk, M. Mitrofanov, S.O. Slipchenko, A.V. Lyutetskii, V.P. Evtikhiev, L.Ya. Karachinsky, I.I. Novikov, G.S. Sokolovskii, N.A. Pikhtin, A.Yu. Egorov, in 2024 Int. Conf. on Electrical Engineering and Photonics (EexPolytech) (IEEE, 2024), p. 394-397. DOI: 10.1109/eexpolytech62224.2024.10755618
- D.S. Papylev, E.S. Kolodeznyi, A.V. Babichev, N.Yu. Kharin, G.V. Voznyuk, M.I. Mitrofanov, S.O. Slipchenko, A.V. Lyutetskii, V.P. Evtikhiev, L.Ya. Karachinsky, I.I. Novikov, V.Yu. Panevin, N.A. Pikhtin, A.Yu. Egorov, St. Petersburg Polytech. Univ. J.: Phys. Math., 17 (3.2), 71 (2024). DOI: 10.18721/JPM.173.213
- M. Brandstetter, A. Genner, C. Schwarzer, E. Mujagic, G. Strasser, B. Lendl, Opt. Express, 22 (3), 2656 (2014). DOI: 10.1364/oe.22.002656
- A.V. Babichev, E.S. Kolodeznyi, A.G. Gladyshev, D.V. Denisov, N.Yu. Kharin, A.D. Petruk, V.Yu. Panevin, S.O. Slipchenko, A.V. Lyutetskii, L.Ya. Karachinsky, I.I. Novikov, N.A. Pikhtin, A.Yu. Egorov, Tech. Phys. Lett., 48 (3), 6 (2022). DOI: 10.21883/TPL.2022.03.52872.19050.
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