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Injection-Enhanced Annealing of GaAs- and GaN-based Heterostuctures Irradiated with Gamma-Quanta and Neutrons
Nosovets V. S.
1,2, Tkachev O. V.1, Dubrovskikh S. M.
1, Khoroshenina E. D.1, Pustovarov V. A.
2
1All-Russia Research Institute of Technical Physics, Russian Federal Nuclear Center, Snezhinsk, Chelyabinsk oblast, Russia
2Ural Federal University after the first President of Russia B.N. Yeltsin, Yekaterinburg, Russia
2Ural Federal University after the first President of Russia B.N. Yeltsin, Yekaterinburg, Russia
Email: dep5@vniitf.ru
Injection current has been shown to fully recover gamma-irradiated GaAs and GaN heterostructures in contrast to neutron-irradiated samples. The threshold dependency of injection-enhanced annealing on current density has been revealed. The threshold current density of annealing in neutron-irradiated samples is of the order of magnitude higher than in gamma irradiation case. The results indicate different height of potential barriers created by radiation-induced defects clusters in GaN and GaAs. Keywords: radiation-induced defects, injection-enhanced annealing, gamma radiation, neutrons, clusters, light-emitting diodes.
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