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Formation of a diffraction grating based on nanoporous germanium by implanting bismuth ions
Stepanov A. L.
1, Rogov A.M.1, Sotnikova V.F.1, Valeev V.F.1, Nuzhdin V.I.1, Konovalov D.A.1
1Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, Kazan, Russia
Email: aanstep@gmail.com
A diffraction grating was formed on the basis of a nanoporous Ge (PGe) layer by irradiating a single-crystal c-Ge (Bi:PGe) substrate with the 209Bi++ ions through a copper mesh mask with the cell size of 40 μm at energy E=72 keV, current density J=5 μA/cm2 and dose D=6.2· 1015 ion/cm2. During ion implantation, swelling of the Bi:PGe layer occurred in unmasked areas of irradiated c-Ge. Formation of periodic Bi:PGe microstructures on the c-Ge surface was controlled by optical, electron and probe microscopy. The diffraction grating efficiency was shown by probing it with helium-neon laser radiation. Keywords: nanoporous germanium, ion implantation, diffraction grating.
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