Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO
Jia G.1,2, Arguirov T.1,2, Kittler M.1,2, Su Z.3, Yang D.4, Sha J.3
1IHP microelectronics, Im Technologiepark 25, Frankfurt (Oder), Germany
2IHB/BTU Joint Lab, Postfach, Cottbus, Germany
3Department of Physics, Zhejiang University, Hangzhou, P.R. China
4State Key Lab of Silicon Materials, Zhejiang University, Hangzhou, P.R. China
Выставление онлайн: 19 марта 2007 г.
Silicon nanowire samples fabricated by thermal evaporation of SiO powder were investigated by cathodoluminescence. Three main bands were found at low temperatures, namely peak 1 at about 620-650 nm (2.0-1.91 eV), peak 2 at 920 nm (1.35 eV) and peak 3 at 1280 nm (0.97 eV). An additional broad band (peak 4) in the infrared region with its maximum at ~1570 nm (0.79 eV) appears at room temperature. The origins of the emission bands are discussed. PACS: 78.60.Hk, 78.67.Lt
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