High-performance InP/GaAsSb double heterojunction bipolar transistor (DHBT) employing GaAsSb/InGaAs superlattice-base structure is demonstrated and compared with GaAsSb bulk-base structure by two-dimensional simulation analysis. The proposed device exhibits a higher current gain of 257 than the conventional InP/GaAsSb type-II DHBT with a lower current gain of 180, attributed to the tynneling behavior of minority carriers in the GaAsSb/InGaAs superlattice-base region under large forward base-emitter bias. In addition, a larger unity gain cutoff frequency of 19.1 GHz is botained for the superlattice-base device than that of 17.2 GHz for the bulk-base device.
Y. Matsuoka, E. Sano. Sol. St. Electron., 38, 1703 (1995)
D. Hadziabdic, T.K. Johansen, V. Krozer, A. Konczykowska, M. Riet, F. Jorge, J. Godin. Electron. Lett., 43, 153 (2007)
T.P. Chen, S.Y. Cheng, C.W. Hung, K.Y. Chu, L.Y. Chen, T.H. Tsai, W.C. Liu. IEEE Electron. Dev. Lett., 29, 11 (2008)
K. Ishii, H. Nakajima, H. Nosaka, M. Ida, K. Kurishima, S. Yamahata, T. Enoki, T. Shibata. Electron. Lett., 39, 911 (2003)
J.H. Tsai, Y.C. Kang. IEEE Trans. Electron. Dev., 53, 1265 (2006)
H. Wang, G.I. Ng. IEEE Trans. Electron. Dev., 47, 1125 (2000)
C.R. Bolognesi, M.M. Dvorak, P. Yeo, X.G. Xu, S.P. Watkins. IEEE Trans. Electron. Dev., 48, 2631 (2001)
Y. Oda, K. Kurishima, N. Watanabe, M. Uchida, T. Kobayashi. Proc. Int. Conf. Indium Phosphide and Related Mater. (2006) p. 92
SILVACO 2000 Atals User's Manual Editor I (SILVACO Int. Santa Clara, CA, USA)
J.H. Tsai, W.C. Liu, D.F. Guo, Y.C. Kang, S.Y. Chiu, W.S. Lour. Semiconductors, 42, 346 (2008)
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.