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The influence of the waveguide layer composition on the emission parameters of 1550 nm InGaAs/InP laser heterostructures

Russian version

DOI: 10.21883/SC.2022.09.54140.9892

NovikovI.I.¹, Nyapshaev I.A.¹, Gladyshev A. G.¹, Andryushkin V. V.¹, Babichev A. V.¹, Karachinsky L. Ya.¹, Shernyakov Yu. M. ², Denisov D.V.^3,4, Kryzhanovskaya N. V.⁵, Zhukov A.E.⁵, Egorov A.Yu.⁶

¹ITMO University, St. Petersburg, Russia
²Ioffe Institute, St. Petersburg, Russia
³Connector Optics LLC, St. Petersburg, Russia
⁴St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
⁵HSE University, St. Petersburg, Russia
⁶Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia

Email: Novikov@switch.ioffe.ru

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Abstract
References
Статистика просмотров

The influence of InGaAlAs waveguide composition on the photoluminescence and electroluminescence of 1550 nm spectral range heterostructures based on thin strained In_0.74Ga_0.26As quantum wells has been studied. An approach is proposed that allows based on the analysis of electroluminescence to carry out a comparative analysis of the deferential gain in fabricated laser diodes. It is shown that decrease of the molar fraction of aluminum in waveguide InGaAlAs layers matched in lattice constant with InP leads to falling of integrated photoluminescence intensity, however, laser diodes with In_0.53Ga_0.31Al_0.16As waveguide layers demonstrate a higher differential gain compared to laser diodes with In_0.53Ga_0.27Al_0.20As waveguide. Keywords: quantum well, molecular-beam epitaxy, photoluminescence, electroluminescence.

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