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Semiconductors, 2025, volume 59, issue 4
International Conference PhysikA.SPb/2025
177
Salii R. A., Malevskaya A. V., Malevskii D. A., Mintairov S. A. , Nadtochiy A. M., Kalyuzhnyy N. A.
Experimental and analytical study of the mechanical stress compensation problem in the InGaAs multiple quantum wells for near-infrared light emitting diodes
178
Sibirev N. V., Shtrom I. V.
Opportunities to rule the growth direction of nanocrawlers
182
Stetsyura S.V. , Kharitonova P.G. , Kozlowski A.V.
Modification of CdS surface by deposition and annealing of a metal structured organic coating
186
Pokrovskiy P. V., Khvostikov V. P., Malevskaya A. V., Khvostikova O. A.
Features of testing micro-sized photovoltaic converters of laser radiation
191
Romanchuk A. K., Malevskaya A. V., Kalyuzhnyy N. A. , Nakhimovich M. V., Shvarts M. Z., Andreev V. M.
Increasing the efficiency of optical power input in AlGaAs/GaAs photovoltaic laser converters
195
Levina S.A., Emelyanov V.M., Kornienko P.D., Larionov V.R., Нakhimovich M.V., Shvarts M.Z.
Study of lifetimes of nonequilibrium charge carriers by electroluminescence method in multijunction solar cells under irradiation with high-energy protons and electrons
199
Mintairov M. A., Evstropov V. V., Kalyuzhnyy N. A., Mintairov S. A., Nakhimovich M. V., Shvarts M. Z.
Determining the photogenerated current imbalance in multijunction laser photoconverters
203
Mikhaylov O.P., Baranov A.I., Maksimova A.A., Uvarov A.V., Vyacheslavova E.A., Gudovskikh A.S.
Capacitance studies of solar cells based on nanostructured "black" silicon with a passivating GaP layer
206
Lebedev A. A., Kozlovski V. V. , Malevsky D. A., Sakharov A. V., Davydovskaya K. S., Levinshtein M. E., Nikolaev A. E.
Irradiation temperature effect on the carrier removal rate in GaN
210
Eliseyev I. A. , Kurtash V. A. , Pezoldt J., Davydov V. Yu.
Control of charge carrier density in photo-FET structures based on atomically thin CVD-MoS2
213
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
Bloshkin A. A., Yakimov A. I.
Improving the efficiency of photodetector structures based on Ge/Si quantum dots by photonic crystal modes in the mid-infrared range
218
Physics of Semiconductor Devices
Demidov E. V., Zakharov V. E., Shmagin V. B., Yablonskiy A. N., Novikov A. V.
Modeling of transport and emission characteristics of light-emitting lateral silicon p+-i-n+ transistor with self-assembled Ge(Si) nanoislands
224
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