Technical Physics Letters
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Electronic structure of ultrathin Cs/Bi2Se3 interfaces
Benemanskaya G. V.
1, Timoshnev S. N.
2
1Ioffe Institute, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
Email: galina.benemanskaya@mail.ioffe.ru, timoshnev@mail.ru
The electronic structure of ultrathin Cs/Bi2Se3 interfaces has been studied by photoelectron spectroscopy using synchrotron radiation. The experiments were carried out in situ in ultrahigh vacuum with submonolayer Cs coverages on Bi2Se3 samples. It was found that the adsorption of Cs causes changes in the core level spectra of Bi 4f, Bi 5d, Se 3d. It has been established that Cs atoms are adsorbed predominantly on Bi atoms in the upper surface layer. The states of the valence band were studied for a clean Bi2Se3 surface and for the Cs/Bi2Se3 interface. Near the Fermi level, 2D topological states have been found. Two induced surface states appear in the region of the valence band upon adsorption of Cs. Keywords: topological insulators, electronic structure, ultrathin interfaces, photoelectron spectroscopy.
- J. Moore, Nat. Phys., 5, 378 (2009). DOI: 10.1038/nphys1294
- A.R. Mellnik, J.S. Lee, A. Richardella, J.L. Grab, P.J. Mintun, M.H. Fischer, A. Vaezi, A. Manchon, E.-A. Kim, N. Samarth, D.C. Ralph, Nature, 511, 449 (2014). DOI: 10.1038/nature13534
- C.-T. Kuo, S.-C. Lin, J.-P. Rueff, Z. Chen, I. Aguilera, G. Bihlmayer, L. Plucinski, I.L. Graff, G. Conti, I.A. Vartanyants, C.M. Schneider, C.S. Fadley, Phys. Rev. B, 104 (24), 245105 (2021). DOI: 10.1103/PhysRevB.104.245105
- G. Tse, D. Yu, Comput. Condens. Matter, 4, 59 (2015). DOI: 10.1016/j.cocom.2015.09.001
- M. Bianchi, R.C. Hatch, Z. Li, P. Hofmann, F. Song, J. Mi, B.B. Iversen, Z.M. Abd El-Fattah, P. Loptien, L. Zhou, A.A. Khajetoorians, J. Wiebe, R. Wiesendanger, J.W. Wells, ACS Nano, 6 (8), 7009 (2012). DOI: 10.1021/nn3021822
- A.G. Ryabishchenkova, M.M. Otrokov, V.M. Kuznetsov, E.V. Chulkov, JETP, 121 (3), 465 (2015). DOI: 10.1134/S1063776115090186
- T. Valla, Z.-H. Pan, D. Gardner, Y.S. Lee, S. Chu, Phys. Rev. Lett., 108 (11), 117601 (2012). DOI: 10.1103/PhysRevLett.108.117601
- M.M. Otrokov, A. Ernst, K. Mohseni, H. Fulara, S. Roy, G.R. Castro, J. Rubio-Zuazo, A.G. Ryabishchenkova, K.A. Kokh, O.E. Tereshchenko, Z.S. Aliev, M.B. Babanly, E.V. Chulkov, H.L. Meyerheim, S.S.P. Parkin, Phys. Rev. B, 95 (20), 205429 (2017). DOI: 10.1103/PhysRevB.95.205429
- H. Zhu, W. Zhou, J.A. Yarmoff, Surf. Sci., 683, 17 (2019). DOI: 10.1016/j.susc.2019.01.006
- O.O. Shvetsov, V.A. Kostarev, A. Kononov, V.A. Golyashov, K.A. Kokh, O.E. Tereshchenko, E.V. Deviatov, Europhys. Lett., 119 (5), 57009 (2017). DOI: 10.1209/0295-5075/119/57009
- D. Biswas, S. Thakur, G. Balakrishnan, K. Maiti, Sci. Rep., 5, 17351 (2015). DOI: 10.1038/srep17351
- I.A. Nechaev, R.C. Hatch, M. Bianchi, D. Guan, C. Friedrich, I. Aguilera, J.L. Mi, B.B. Iversen, S. Blugel, Ph. Hofmann, E.V.Chulkov, Phys. Rev. B, 87 (12), 121111 (2013). DOI: 10.1103/PhysRevB.87.121111
- L.V. Yashina, J. Sanchez-Barriga, M.R. Scholz, A.A. Volykhov, A.P. Sirotina, V.S. Neudachina, M.E. Tamm, A. Varykhalov, D. Marchenko, G. Springholz, G. Bauer, A. Knop-Gericke, O. Rader, ACS Nano, 7 (6), 5181 (2013). DOI: 10.1021/nn400908b
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