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Crystallization and silicon carbide formation in two-layer amorphous silicon-carbon films during electron irradiation

Russian version

DOI: 10.21883/TP.2022.11.55178.180-22

Sidorov A.I.¹, Leks E. Y.², Podsvirov O.A.², Vinogradov A. Y. ³

¹ITMO University, St. Petersburg, Russia
²Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
³Ioffe Institute, St. Petersburg, Russia

Email: sidorov@oi.ifmo.ru, lexelenaya@gmail.com, olegpodsvir@mail.ru, vingrdov@gmail.com

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It is shown that the irradiation by focused electron beam with electron energy of 10 keV of two-layer amorphous silicon-carbon films 60 nm thick results in films partial crystallization. Moreover, in the irradiated zone the layer of crystalline silicon carbide with luminescent properties is formed. The observed effects are confirmed by methods of Raman spectroscopy and by luminescence spectra Keywords: silicon, carbon, silicon carbide, film, structure, electron beam, Raman spectroscopy.

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