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Kinetics of reversible phase transitions in Ge2Sb2Te5 thin films at femtosecond laser irradiation
Russian version
DOI: 10.61011/EOS.2023.02.55774.10-23
Kolchin A. V. 1, Zabotnov S. V. 2, Shuleiko D. V.2,3, Lazarenko P. I.4, Glukhenkaya V. B.4, Kozyukhin S. A.4, Kashkarov P. K.2,5
1Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, Russia
2Department of Physics, Lomonosov Moscow State University, Moscow, Russia
3Big Data Storage and Analysis Center, Lomonosov Moscow State University, Moscow, Russia
4National Research University of Electronic Technology (MIET), Zelenograd, Russia
5National Research Center “Kurchatov Institute”, Moscow, Russia
Email: avkolchin432@gmail.com, zabotnov@physics.msu.ru, shuleyko.dmitriy@physics.msu.ru, aka.jum@gmail.com, Kapakycek2009@yandex.ru, sergkoz@igic.ras.ru, p.kashkarov@mail.ru
PDF
Femtosecond laser irradiation of amorphous Ge2Sb2Te5 thin films initiates reversible phase transitions. The amorphization and crystallization of Ge2Sb2Te5 thin films were experimentally and theoretically confirmed. Electron and lattice temperatures kinetics during laser pulse duration were evaluated by two-temperature models calculations and experimental data. The dynamical changing of optical properties have been taking into account. Temperatures and cooling rates, which are necessary to initiate phase transitions by IR laser pulses with subpicosecond duration. The observed results open perspectives for improvement of Ge2Sb2Te5 nanophotonical devices. Keywords: Ge2Sb2Te5 femtosecond laser technologies, Raman spectroscopy, phase transitions. DOI: 10.61011/EOS.2023.02.55774.10-23
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