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- 2022
Effect of arsenic pressure during overgrowth of InAs quantum dots with a thin low-temperature GaAs layer on their optical properties
Balakirev S. V.
1, Kirichenko D. V.1, Komarov S. D.2, Dragunova A. S.2, Chernenko N. E.1, Shandyba N. A.1, Kryzhanovskaya N. V.2, Zhukov A. E.2, Solodovnik M. S.
1
1Institute of Nanotechnologies, Electronics and Equipment Engineering, Southern Federal University, Taganrog, Russia
2International Laboratory of Quantum Optoelectronics, National Research University Higher School of Economics, St. Petersburg, Russia
2International Laboratory of Quantum Optoelectronics, National Research University Higher School of Economics, St. Petersburg, Russia
Email: sbalakirev@sfedu.ru, solodovnikms@sfedu.ru
This paper presents the results of the experimental studies of InAs quantum dot overgrowth by a low-temperature GaAs layer at different arsenic vapor pressures. We reveal that a threefold decrease in the arsenic pressure at a fixed deposition rate of the capping layer leads to a change in the shape of the photoluminescence spectrum of quantum dots with one maximum at the level of 1.19 eV to the shape of the spectrum with two low-energy contributions at the levels of 1.08 and 1.15 eV. Based on the analysis of the power dependences of the photoluminescence spectra, we conclude that the low-energy contributions of the photoluminescence of quantum dots overgrown at a low arsenic pressure correspond to the ground-state emission of two groups of quantum dots with different average sizes formed during mass transfer in the "quantum dot-wetting layer-matrix" system. Keywords: quantum dots, InAs/GaAs, Stranski-Krastanov mechanism, molecular beam epitaxy, arsenic pressure. DOI: 10.61011/SC.2023.04.56425.13k
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