MOCVD growth of InGaAs metamorphic heterostructures for photodiodes with low dark current
Samartsev I. V.1, Zvonkov B. N. 1, Baidus N. V.1, Chigineva A. B. 1, Zhidyaev K. S. 1, Dikareva N. V.1, Zdoroveyshchev A. V. 1, Rykov A. V.
1, Plankina S. M. 1, Nezhdanov A. V. 1, Ershov A.V.
1
1Lobachevsky State University, Nizhny Novgorod, Russia
Email: samartsev@nifti.unn.ru, bnv@nifti.unn.ru, chigineva@nifti.unn.ru, zhidyaev@nifti.unn.ru, dnat@ro.ru, zdorovei@gmail.com, rykovsc@gmail.com, plankina@phys.unn.ru, nezhdanov@phys.unn.ru, ershov@phys.unn.ru
The epitaxial growth technique of InGaAs photodiode structures based on a digital InGaAs/GaAs metamorphic buffer layer by metalorganic chemical vapor deposition has been developed. The spectral dependence of the photocurrent of photodiodes based on the produced structures has a maximum at the 1.24 μm wavelength. The photosensitivity range at 10% of peak is 1.17-1.29 μm at room temperature. The current-voltage characteristics in the temperature range 9-300 K were investigated. It is shown that the dark current consists of generation-recombination and tunneling components. The dark current density at room temperature was 8·10-5 A/cm2 with a reverse bias of -5 V Keywords: MOCVD, nanomaterials, semiconductors AIIIBV, infrared photodiodes, dark current.
- Yang He, Yurun Sun, Yan Song, Yongming Zhao, Shuzhen Yu, Jianrong Dong. Jpn. J. Appl. Phys., 55, 065501 (2016)
- Daehwan Jung, Patrick G. Callahan, Bongki Shin, Kunal Mukherjee, Arthur C. Gossard, John E. Bowers. J. Appl. Phys., 122, 225703 (2017)
- N.A. Kalyuzhnyy, S.A. Mintairov, A.M. Nadtochiy, V.N. Nevedomskiy, D.V. Rybalchenko, M.Z. Shvarts. Electron. Lett., 53 (3), 173 (2017)
- Pamela Jurczak, Kimberly A. Sablon, Marina Gutierrez, Huiyun Liu, Jiang Wu. Infr. Phys. Technol., 81, 320 (2017)
- K. Swaminathan, L.-M. Yang, T.J. Grassman, G. Tabares, A. Guzman, A. Hierro, M.J. Mills, S.A. Ringel. Opt. Express, 19, 7280 (2011)
- Yang Nan-Nan, Ma Ying-Jie, Gu Yi, Chen Xing-You, Gong Qian, Zhang Yong-Gang. J. Infrared Millim. Waves, 38 (3), 275 (2019)
- Zhu Bin, Han Qin, Yang Xiao-Hong, Ni Hai-Qiao, He Ji-Fang, NiuZhi-Chuan, Wang Xin, Wang Xiu-Ping, Wang Jie. Chinese Phys. Lett., 27 (3), 038504 (2010)
- S. Fedderwitz, A. Stohr, K.H. Tan, S.F. Yoon, Michael Weiss, ArturPoloczek, W.K. Loke, S. Wicaksono, Tien Khee Ng, V. Rymanov, A. Patra, E. Tangdiongga, Dieter Jager. IEEE Phot. Techn. Lett., 21 (13), 911 (2009)
- X.Y. Chen, Y.G. Zhang, Y. Gu, L. Zhou, Y.Y. Cao, X. Fang, Hsby Li. J. Cryst. Growth, 393, 75 (2014)
- X.Y. Chen, Y. Gu, Y.G. Zhang, Y.J. Ma, B. Du, J. Zhang, W.Y. Ji, Y.H. Shi, Y. Zhu. J. Cryst. Growth, 488, 51 (2018)
- S.Q. Liu, Q. Han, B. Zhu1, X.H. Yang, H.Q. Ni, J.F. He, X. Wang, M.F. Li, Y. Zhu, J. Wang, X.P. Wang, Z.C. Niu. Appl. Phys. Lett., 98, 201104 (2011)
- S.M. Plankina, O.V. Vikhrova, Yu.A. Danilov, B.N. Zvonkov, N.Yu. Kononova, A.V. Nezhdanov, I.Yu. Pashenkin. Semiconductors, 50, 1539 (2016)
- Sudip Saha, Daniel T. Cassidy, D.A. Thompson. J. Appl. Phys., 113, 124301 (2013)
- J. Groenen, R. Carles, G. Landa. Phys. Rev. B, 58 (16), 10452 (1998)
- S.N.G. Chu, S. Nakahara, K.E. Strege, W.D. Johnston, jr. J. Appl. Phys., 57, 4610 (1985)
- P.V. Seredin, A.V. Glotov, V.E. Ternovaya, E.P. Domashevskaya, I.N. Arsentyev, L.S. Vavilova, I.S. Tarasov. Semiconductors, 45, 1433 (2011)
- I.V. Samartsev, S.M. Nekorkin, B.N. Zvonkov, V.Ya. Aleshkin, A.A. Dubinov, I.J. Pashenkin, N.V. Dikareva, A.B. Chigineva. Semiconductors, 52 (12), 1564 (2018)
- A.V. Sorochkin V.S. Varavin, A.V. Predein, I.V. Sabinina, M.V. Yakushev. Semiconductors, 46, 535 (2012)
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.
