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Multi-Phonon Relaxation of the 1s(T2) Triplet of Neutral Magnesium Donors in Silicon
Bekin N. A.
1, Zhukavin R. Kh.
1, Tsyplenkov V. V.
1, Shastin V. N.
1
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: nbekin@ipmras.ru
Using adiabatic and one-electron approximations, the rate of multiphonon relaxation of the 1s(T2) triplet of neutral magnesium donors in silicon is estimated. The dominant scattering processes associated with interaction with LO and LA phonons are taken into account. According to calculations, the rate of multiphonon relaxation at zero temperature is of the order of 1011 s-1. Keywords: deep impurities, magnesium donors in silicon, multiphonon relaxation, adiabatic approximation.
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