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Fabrication of dielectric resonators on the light-emitting Ge/Si heterostructures
Russian version
Yurasov D.V.1, Shaleev M.V.1, Shengurov D.V.1, Peretokin A.V.1, Skorokhodov E.V.1, Rodyakina E.E.2, Smagina Zh.V.2, Novikov A.V.1
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: Inquisitor@ipmras.ru
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The paper presents the results of developing the technology for deep anisotropic plasma-chemical etching of semiconductor GeSi structures using inverse electron lithography with the combined deposition of a metal mask and e-beam resist. Optimization of various stages of the technological process for the formation of a metal mask and subsequent transfer of the pattern to the real structure was carried out, taking into account the proximity effect during lithography and changes in the actual sizes of holes during plasma-chemical etching. The results obtained by this method are compared with the approach of using a specialized high-contrast e-beam resist as a mask. The capabilities of this approach for the formation of two-dimensional photonic crystals on a GeSi semiconductor heterostructure with a thickness of 1 μm or above have been demonstrated. It is shown that the formed photonic crystals make it possible to increase the intensity of the photoluminescence signal by more than an order of magnitude compared to the initial structure. Keywords: SiGe heterostructures, electron beam lithography, metal mask, reactive ion etching, photonic crystals, photoluminescence.
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