Technical Physics Letters
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- 2022
Structural and phase analysis of the Ge(111)c(2x 8), Si(100)(2x 1) and BaO/Si(100) surfaces by means of height histograms in scanning tunneling microscopy
Kuzmin M. V.
1, Malkov D. A.1
1Ioffe Institute, St. Petersburg, Russia
Email: m.kuzmin@mail.ioffe.ru
We demonstrate that quantitative analysis of topography height distributions in scanning tunneling microscopy may be utilized to probe not only the surface roughness but also the atomic arrangement, morphological structure, and phase composition of various samples. The implementation of such analysis is reported for well-known model surfaces, such as Ge(111)c(2x 8) and Si(100)(2x 1), as well as BaO/Si(100) thin-film system, prepared at different temperatures. Keywords: scanning tunneling microscopy, surface morphology, height histogram, atomic structure, phase composition.
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