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Memristor effect in PZT:TiOx composite film
Russian version
Delimova L. A. 1, Gushchina E. V.1, Yuferev V. S. 1, Seregin D. S. 2, Vorotilov K. A. 2, Sigov A. S. 2
1Ioffe Institute, St. Petersburg, Russia
2MIREA - Russian Technological University, Moscow, Russia
Email: ladel@mail.ioffe.ru, katgushch@yandex.ru, valyuf@ammp3.ioffe.ru, d_seregin@mirea.ru, vorotilov@mirea.ru, sigov@mirea.ru
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The electrical properties of a new type of capacitor structures with a Pt/PZT:TiOx/Pt composite film, in which the three-dimensional nanoscale pore structure in the ferroelectric lead zirconate titanate film is filled with titanium dioxide, are studied. The memristor effect is detected using electrical measurements on direct and alternating current, as well as by measuring the local current using contact atomic force microscopy, which opens up prospects for studying such structures for use in advanced resistive memory devices. Keywords: ferroelectric composite film, titanium dioxide, switchable resistive states.
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