Technical Physics Letters
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Growth of germanium-rich Ge1-xSix solid solutions
Supelnyak S.I.
1, Baskakov E. B.
1, Korobeynikova E.N.
1, Kosushkin V.G.
1, Strelov V.I.
1
1"Space Materials Science Laboratory - Kaluga" of the Kurchatov Complex of Crystallography and Photonics, National Research Center "Kurchatov Institute", Kaluga, Russia
Email: Supelnyak_SI@nrcki.ru
A solid solution Ge1-xSix with a calculated Si concentration of 0.6 at.% was obtained by vertical directional crystallization. The distribution of Si along the crystal growth axis and in several cross sections was studied. The results of the studies confirm the formation of a solid solution. The nature of the change in the silicon content is consistent with the concepts of the crystallization process of a solid solution with a silicon distribution coefficient in germanium (kSi>1). Keywords: solid solution, germanium, silicon, directional crystallization.
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