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Synapse-resistor based on semiconductor-metal transition in vanadium dioxide
Russian version
Kalmykov D. A. 1, Aliev V.Sh. 1,2, Bortnikov S.G. 1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
Email: kalmykov@isp.nsc.ru, aliev@isp.nsc.ru, bortnik@isp.nsc.ru
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An artificial synapse (synapse-resistor) for neuromorphic circuits has been developed and investigated; its operating principle is based on the use of semiconductor-metal phase transition in vanadium dioxide. Vanadium dioxide polycrystalline thin films were synthesized by ion-beam sputtering-deposition method. The synapse-resistor was formed by photolithography on SiO2 membrane. The linear dimensions of the synapse-resistor are ~ 100 μm. The electrical characteristics were investigated and the possibility of controlling the resistance of the synapse-resistor by electrical pulses was demonstrated. The performance of the synapse-resistor at the specified dimensions was about 20 μs. An electrical scheme of McCulloch-Pitts artificial neuron realization based on synapse-resistors was proposed. The synapse-resistor design allows scaling down to the size of a few microns, which will reduce power consumption and increase performance by more than 100 times. Keywords: vanadium dioxide, semiconductor-metal phase transition, artificial synapse, analog neural networks.
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