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Modeling of transport and emission characteristics of light-emitting lateral silicon p+-i-n+ transistor with self-assembled Ge(Si) nanoislands
Russian version
Demidov E. V.1, Zakharov V. E.1, Shmagin V. B. 1, Yablonskiy A. N. 1, Novikov A. V. 1
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: demidov@ipmras.ru, shm@ipmras.ru, yablonsk@ipmras.ru, anov@ipmras.ru
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Presents the modeling of transport and radiation characteristics of previously experimentally studied light-emitting lateral silicon p+-i-n+ transistors with an array of self-assembled Ge(Si) nanoislands grown on a silicon on insulator substrate. The performed modeling made it possible to quantitatively explain experimental results indicating the possibility to control the spatial distribution of radiation intensity in such light-emitting transistors by applying a bias voltage to the substrate. It is shown that such a possibility arises due to the control of the conduction channel for electrons or holes formed at the boundary of the structure with a hidden oxide. Keywords: light-emitting p+-i-n+ transistors, GeSi nanoislands, spatial localization, electroluminescence.
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