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Growth and characterization of ferroelectric SrBi2Ta2O9 single crystals via high-temperature self-flux solution method
Amori n H.1, Bdikin I.K.1,2, Kholkin A.L.1, Costa M.E.V.1
1Department of Ceramics and Glass Engineering & Center for Research in Ceramic and Composite Materials (CICECO), University of Aveiro,-193 Aveiro, Portugal
2Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Russia
Email: kholkin@cv.ua.pt
Поступила в редакцию: 24 июня 2005 г.
Выставление онлайн: 17 февраля 2006 г.
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SrBi2Ta2O9 (SBT) single crystals were produced by high temperature self-flux solution method using a Bi2O3 flux modified with B2O3. The processing conditions were optimized to obtain large and translucent SBT crystals with a layered habit and typical dimensions of approximately 7-1ptx-1pt5-1ptx-1pt0.2 mm. X-ray diffraction and x-ray topography measurements revealed the major faces of the crystals with natural rectangular platelet morphology are perfectly (001)-orientated with edges directed along the [110] directions. High quality of the crystals was confirmed by rocking curves (half width of 0.04o for the (0 0 18) reflection) and by ferroelectric measurements. The anisotropy in the dielectic and ferroelectric properties was investigated both along the [110] (ab-plane) and the [001] (c-axis) directions. The growth mechanism, morphology and dielectric anisotropy of the SBT crystal platelets are discussed based on its crystallographic structure. H. Amori n and I.K. Bdikin acknowledge the Foundation for Science and Technology (FCT, Portugal) for the financial support through Ph.D. and Postdoctoral grants, respectively. PACS: 77.84.-s, 81.10.-h
  1. C.A. Paz de Araujo, J.D. Cuchiaro, L.D. McMillan, M.C. Scott, J.F. Scott. Nature 374, 6523, 627 (1995)
  2. J.F. Scott, F.M. Ross, C.A. Paz de Araujo, M.C. Scott, M. Huffman. Mater. Res. Soc. Bull. 21, 7, 33 (1996).
  3. O. Auciello, J.F. Scott, R. Ramesh. Physics Today 51, 7, 22 (1998)
  4. K. Amanuma, T. Hase, Y. Miyasaka. Appl. Phys. Lett. 66, 2, 221 (1995)
  5. R. Dat, J.K. Lee, O. Auciello, A.I. Kingon. Appl. Phys. Lett. 67, 4, 572 (1995)
  6. P.Y. Chu, R.E. Jones, P. Zurcher, D.J. Taylor, B. Jiang, S.J. Gillespie, Y.T. Lii, M. Kottke, P. Fejes, W. Chen. J. Mater. Res. 11, 5, 1065 (1996)
  7. S.E. Cummins, L.E. Cross. J. Appl. Phys. 39, 5, 2268 (1968)
  8. R.E. Newnham, R.W. Wolfe, J.F. Dorrian. Mater. Res. Bull. 6, 10, 1029 (1971)
  9. R. Clarke, R.W. Whatmore. J. Crystal Growth 33, 1, 29 (1976)
  10. N. Setter, L.E. Cross. J. Crystal Growth 50, 2, 555 (1980)
  11. B.N. Sun, R. Boutellier, Ph. Sciau, E. Burkhardt, V. Rodriguez, H. Schmid. J. Crystal Growth 112, 1, 71 (1991)
  12. S.K. Kim, M. Miyayama, H. Yanagida. J. Ceram. Soc. Jpn. 102, 8, 722 (1994)
  13. H. Irie, M. Miyayama, T. Kudo. J. Appl. Phys. 90, 8, 4089 (2001)
  14. R. Aoyagi, H. Takeda, S. Okamura, T. Shiosaki. Mater. Res. Bull. 38, 1, 25 (2003)
  15. M. Susaki, N. Nagasawa, A. Machida, T. Ami. Jpn. J. Appl. Phys. 35, 5A, L564 (1996)
  16. A. Machida, N. Nagasawa, T. Ami, M. Suzuki. Jpn. J. Appl. Phys. 37, 2A, 795 (1999)
  17. B. Sih, J. Tang, M. Dong, Z.-G. Ye. J. Mater. Res. 16, 6, 1726 (2001)
  18. D. Elwell, H.J. Shell. Crystal Growth from High Temperature Solution. Academic Press, N.Y. (1975). Vol. 3. 634 p
  19. E.C. Subbarao. J. Phys. Chem. Sol. 23, 665 (1962)
  20. J. Robertson, W. Chen, W.L. Warren, C.D. Gutleben. Appl. Phys. Lett. 69, 12, 1704 (1996)
  21. A.D. Rae, J.G. Thompson, R.L. Withers. Acta Crystalogr. Sec. B 48, 4, 418 (1992)
  22. W. Tolksdorf. Handbook of Crystal Growth: Bulk Crystal Growth, Flux Growth / Ed. D.T.J. Hurle. Elsevier Science B.V., North Holland (1994). Vol. 2. N 10. P. 563
  23. I.K. Bdikin, I.M. Shmytko, A.M. Balbashov, A.V. Kazansky. J. Appl. Crystallogr. 26, 71 (1993)
  24. I. Bdikin, A. Maljuk, S. Watauchi, I. Tanaka, G. Emel'chenko. Physica C 336, 3--4, 244 (2000)
  25. H. Amorin, M.E.V. Costa, A.L. Kholkin, J.L. Baptista. J. Eur. Ceram. Soc. 24, 6, 1535 (2004)
  26. N. Nagasawa, A. Machida, A. Ami, M. Suzuki. J. Ceram. Soc. Jpn. 106, 5, 477 (1998)
  27. Y. Shiohara, A. Endo. Mater. Sci. Eng. R 19, 1--2, 1 (1997)
  28. P. Hartman. Crystal Growth: An Introduction. North--Holland, Amsterdam (1973). 531 p
  29. R.F.P. Grimbergen, H. Meekes, P. Bennema, C.S. Strom, L.J.P. Vogels. Acta Crystallogr. Sec. A 54, 4, 491 (1998)
  30. Y. Shimakawa, Y. Kubo, Y. Nakagawa, S. Goto, T. Kamiyama, H. Asano, F. Izumi. Phys. Rev. B 61, 10, 6559 (2000)
  31. H. Amorin, V.V. Shvartsman, A.L. Kholkin, M.E.V. Costa. Appl. Phys. Lett. 85, 23, 5667 (2004)
  32. S. Kamba, J. Pokorny, V. Porokhonsky, J. Petzelt, M.P. Moret, A. Garg, Z.H. Barber, R. Zallen. Appl. Phys. Lett. 81, 6, 1056 (2002)
  33. A. Onodera, K. Yoshio, H. Yamashita. Jpn. J. Appl. Phys. 42, 9B, 6218 (2003)
  34. J.-H. Ko, A. Hushur, S. Kojima, B.C. Sih, Z.G. Ye. Appl. Phys. Lett. 81, 21, 4043 (2002)
  35. H. Irie, M. Miyayama. Appl. Phys. Lett. 79, 2, 251 (2001).

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