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Electro-diffusion phenomena in C₆₀ thin films

Katz E.A.¹, Faiman D.^1,2, Tuladhar S.M.¹, Shtutina S.², Froumin N.³, Polak M.³

¹Dept. of Solar Energy and Environmental Physics J. Blaustein Inst. for Desert Research, Ben-Gurion University of the Negev, Sede Boqer, Israel
²Dept. of Physics, Ben-Gurion University of the Negev, Beersheba, Israel
³Dept. of Materials, Ben-Gurion University of the Negev, Beersheba, Israel

Email: keugene@bgumail.bgu.ac.il

Выставление онлайн: 17 февраля 2002 г.

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As part of our ongoing research program to produce semiconductor devices based on the C₆₀ thin films, we report here on our first attempts at the intercalative doping of C₆₀ thin films by diffusion of metals. Two techniques were employed: (a) chemically-induced counter electro-diffusion of Cu and I₂ into a C₆₀ matrix; (b) diffusion of Au under the action of an external electric field. This work was funded partly by the Israel Ministry of National Infrastructures. E.A.K. also thanks financial support by the Israel Ministry of Immigrant Absorption. S.M.T. wishes to thank the Albert Katz School for Desert Studies and the Bonna Terra Foundation.

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