Demishev S.V.1, Pronin A.A.1, Sluchanko N.E.1, Samarin N.A.1, Glushkov V.V.1, Lyapin A.G.2, Kondrin M.V.2, Brazhkin V.V.2, Varfolomeeva T.D.2, Popova S.V.2, Ohta H.3
1General Physics Institute, Russian Academy of Sciences, Moscow, Russia
2Institute of High pressure Physics, Russian Academy of Sciences, Troitsk, Moscow region, Russia
3Molecular Photoscience Research Center and Department of Physics, Kobe University, Rokkodai, Nada, Kobe 65, Japan
Email: demis@lt.gpi.ru
Выставление онлайн: 19 марта 2002 г.
DC and AC conductivities, magnetoresistance and thermopower of carbyne samples were studied over the temperature range 1.8-300 K at frequencies 10 MHz-1 GHz. It was established that a variation in the fraction of s-0.5ptp2 bonds in carbynes induces transition from one- to two- and then to three-dimensional conduction. The physical properties of the new carbyne-based solids may be understood within the model treating carbyne as a nanocluster material based on linear carbon chains and having characteristic cluster size 1-10 nm. Work was supported by the Russian Foundation for Basic Research (project Nos. 00-02-16403 and 99-02-17408), INTAS (grant N 00-807) and the programs of the Ministry of Industry, Science, and Technology "Fullerenes and Atomic Clusters", "Phisics of Microwaves", and "Fundamental Spectroscopy".
- A.G. Lyapin et al. Phys. Stat. Sol. (b) 211, 401 (1999)
- Yu.P. Kudryavtsev et al. Izv. Akad. Nauk. Ser. Khim. 3, 450 (1993)
- B.M. Bulychev, I.A. Udod. Ross. Khim. Zh. 39, 9 (1995)
- S.V. Demishev et al. JETP Lett. 72, 381 (2000)
- N.F. Mott, E.A. Davis. Electronic Processes in Non-crystalline Materials. Clarendon, Oxford (1979). V. 1
- I.P. Zvyagin. Kinetic Phenomena in Disordered Semiconductors. Mosk. Gos. Univ., Moscow (1984)
- A. Hunt. Solid State Commun. 86, 765 (1993)
- A. Hunt. In: Proc. of the 5th Int. Conf. on Hopping and Related Phenomena / Ed. C.J. Adkins, A.R. Long, J.A. Mclnnes. World Scientific, Singapore (1994). P. 65
- M.E. Raikh et al. Phys. Rev. B45, 6015 (1992)
- B.I. Shklovskil, A.L. Efros. Electronic Properties of Doped Semiconductors. Springer-Verlag, N. Y. (1984)
- S.V. Demishev et al. JETP 83, 180 (1996)
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