Мehrabova М.А.1, Nuriyev H.R.2, Оrujov H.S.2,3, Hasanov N.H.4, Кеrimova Т.I.1, Аbdullayeva А.А.3, Kazimova A.I.5
1Institute of Radiation Problems of ANAS Baku, Baku, Azerbaijan
2Institute of Physics of ANAS named after academician G.M. Abdullayev, Baku, Azerbaijan
3Azerbaijan Technical University, Baku, Azerbaijan
4Baku State University, Baku, Azerbaijan
5Ganja State University, Baku Azerbaijan
Email: m.mehrabova@science.az
Поступила в редакцию: 30 июня 2019 г.
Выставление онлайн: 19 ноября 2019 г.
The effect of γ-irradiation at the dose Dγ=605.6 kGy on the temperature dependences of conductivity and dielectric permittivity of Cd1-xFexTe semimagnetic semiconductors were investigated. The character of the ε'(T) dependences of the irradiated Cd1-xFexTe changes: there is a drop in the curves in the temperature range of 300/400 K at measurement frequencies 25 Hz-1 MHz, and ε' increases by 20 times. In the sigma(T) dependence, at all measurement frequencies a maximum appears at a temperature of 400 K and conductivity increases by 40 times. We assume that the character of the temperature dependences of dielectric permittivity and conductivity corresponds to the ionic conductivity. Keywords: Semimagnetic semiconductors, dielectric permittivity, conductivity, measurement frequencies, γ-irradiation
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