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Influence of a multilayer grounded field plate on the effect of quasi-saturation of current-voltage chatacteristics of power radio frequence lateral transistors
Was been performed modeling of LDMOS-transistor structures with two- and three-layer grounded field plates. On both structures the manifestation of the effect of quasi-saturation of ID-VD characteristics was estimated. It is shown that the new design of the three-layer grounded field plate significantly suppresses the effect of quasi-saturation. Keywords: power RF transistors, LDMOS, quasi-saturation of I-V characteristics.
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- R.P. Alekseev, M.I. Chernykh, A.N. Tsotsorin, I.V. Semeykin, G.V. Bykadorova. FTP, 55 (8), 689 (2021). (in Russian)
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Дата начала обработки статистических данных - 27 января 2016 г.