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Photomodulation optical spectroscopy of CdHgTe graded band gap heterostructures
Komkov O. S.
1, Yakushev M. V.
2
1St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: okomkov@yahoo.com
Multilayer mercury-cadmium-telluride photodetecting heterostructures grown by molecular beam epitaxy on Si and GaAs substrates were studied using the infrared photoreflectance method. Based on the period of Franz-Keldysh oscillations observed in the photoreflectance spectra, the strength of the built-in electric field near the "working layer - graded band gap near-surface layer" heterointerface was determined in a contactless way. An analytical calculation of distribution of such field over the structure depth has specified the region in which the photomodulation signal is formed. The experimentally obtained field values turned out to be higher than the calculated ones, which is explained by the influence of the photovoltaic effect. Keywords: photoreflectance, mercury-cadmium-telluride, MCT, CdHgTe, built-in electric field, Fourier transform infrared spectroscopy, Franz-Keldysh oscillations.
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