Capacitance studies of solar cells based on nanostructured "black" silicon with a passivating GaP layer
Mikhaylov O.P.1, Baranov A.I.1, Maksimova A.A.1,2, Uvarov A.V.1, Vyacheslavova E.A.1, Gudovskikh A.S.1,2
1Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2St. Petersburg Electrotechnical University ”LETI“, St. Petersburg, Russia
Email: oleg.mikhaylov.00@gmail.com, itiomchik@yandex.ru, deer.blackgreen@yandex.ru, lumenlight@mail.ru, cate.viacheslavova@yandex.ru, gudovskikh@spbau.ru
The study investigated heterostructure solar cells based on p-Si substrates doped with B, featuring a b-Si surface created by dry etching. The n-layer consisted of a thin film of wide-bandgap GaP grown by plasma-assisted atomic layer deposition. It was demonstrated that irradiation with a 1 MeV electron beam at a fluence of 5·1014 cm-2 reduced the short-circuit current density from 26.3 to 12.2 mA/cm2, and at 1·1015cm-2, it further decreased to 2.8 mA/cm2. According to quantum efficiency spectra and deep-level transient spectroscopy data, no significant degradation of the bulk silicon properties was observed. However, after irradiation, a kink appeared in the current-voltage characteristics, indicating the presence of a parasitic barrier in the structure. This barrier is attributed to the degradation of the metallic contact to n-GaP due to irradiation-induced damage. Keywords:gallium phosphide (GaP), black silicon, admittance spectroscopy, deep-level transient spectroscopy (DLTS).
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